Analytical and Physical Investigation on Source Resistance in InxGa1-xAs Quantum-Well High-Electron-Mobility Transistors.

We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1-xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by solving the coupled quadratic differential equations for each current component with appropriate boundary conditions, requiring only six physical and geometrical parameters, including ohmic contact resistivity (ρc), barrier tunneling resistivity (ρbarrier), sheet resistances of the cap and channel regions (Rsh_cap and Rsh_ch), side-recessed length (Lside) and gate-to-source length (Lgs). To extract each model parameter, we fabricated two different TLM structures, such as cap-TLM and recessed-TLM. The developed RS model in this work was in excellent agreement with the RS values measured from the two TLM devices and previously reported short-Lg HEMT devices. The findings in this work revealed that barrier tunneling resistivity already played a critical role in reducing the value of RS in state-of-the-art HEMTs. Unless the barrier tunneling resistivity is reduced considerably, innovative engineering on the ohmic contact characteristics and gate-to-source spacing would only marginally improve the device performance.

Stand-off radiation detection techniques.

Remote detection of radioactive materials is extremely challenging, yet it is important to realize the technique for safe usage of radioactive materials. Gamma rays are the most far distant penetrating photons that are involved with the radiation decay process. Herein, we overview the gamma-ray detection techniques that are material-based and vacuum tube-based. A muon detector is also reviewed as a radioactive material imager. We overview versatile detectors that are currently being widely used and new concepts that may pave the way for promising remote detectability up to several kilometers.

Generation of E-band metasurface-based vortex beam with reduced divergence angle.

Vortex beams carrying orbital angular momentum (OAM) have attracted considerable attention for the development of high-capacity wireless communication systems due to their infinite sets of orthogonal modes. However, the practical applications of Laguerre-Gaussian type vortex beams are limited due to the fact that the divergence angle increases as the order of the OAM mode increases. In this work, we present metasurfaces that generate vortex beams carrying OAM modes with reduced divergence angles in the E-band frequency range. The metasurfaces were designed using eight different meta-atom phase elements, including a spiral phase distribution for OAM modes l = 1 and 2, a phase gradient array to avoid interference with the source beam, and a lens pattern array to reduce the divergence angle. Through simulation and experimental measurement, it was confirmed that the divergence angle of the vortex beam generated by the metasurface with the lens pattern was reduced from 13° to 9° and 14° to 11° for OAM modes l = 1 and 2, respectively, in comparison with the metasurface without the lens pattern. Our results provide new design methods for various applications based on OAM multiplexing especially in high frequency E-band range.

Remote detection of radioactive material using high-power pulsed electromagnetic radiation.

Remote detection of radioactive materials is impossible when the measurement location is far from the radioactive source such that the leakage of high-energy photons or electrons from the source cannot be measured. Current technologies are less effective in this respect because they only allow the detection at distances to which the high-energy photons or electrons can reach the detector. Here we demonstrate an experimental method for remote detection of radioactive materials by inducing plasma breakdown with the high-power pulsed electromagnetic waves. Measurements of the plasma formation time and its dispersion lead to enhanced detection sensitivity compared to the theoretically predicted one based only on the plasma on and off phenomena. We show that lower power of the incident electromagnetic wave is sufficient for plasma breakdown in atmospheric-pressure air and the elimination of the statistical distribution is possible in the presence of radioactive material.

Post-Cleaning Effect on a HfO2 Gate Stack Using a NF3/NH3 Plasma.

The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

Two-Step Growth of Epitaxial InP Layers by Metal Organic Chemical Vapor Deposition.

In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/IIIsources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of IIP epitaxial layers on GaAs substrates.

Selective photochemical synthesis of Ag nanoparticles on position-controlled ZnO nanorods for the enhancement of yellow-green light emission.

A novel technique for the selective photochemical synthesis of silver (Ag) nanoparticles (NPs) on ZnO nanorod arrays is established by combining ultraviolet-assisted nanoimprint lithography (UV-NIL) for the definition of growth sites, hydrothermal reaction for the position-controlled growth of ZnO nanorods, and photochemical reduction for the decoration of Ag NPs on the ZnO nanorods. During photochemical reduction, the size distribution and loading of Ag NPs on ZnO nanorods can be tuned by varying the UV-irradiation time. The photochemical reduction is hypothesized to facilitate the adsorbed citrate ions on the surface of ZnO, allowing Ag ions to preferentially form Ag NPs on ZnO nanorods. The ratio of visible emission to ultraviolet (UV) emission for the Ag NP-decorated ZnO nanorod arrays, synthesized for 30 min, is 20.5 times that for the ZnO nanorod arrays without Ag NPs. The enhancement of the visible emission is believed to associate with the surface plasmon (SP) effect of Ag NPs. The Ag NP-decorated ZnO nanorod arrays show significant SP-induced enhancement of yellow-green light emission, which could be useful in optoelectronic applications. The technique developed here requires low processing temperatures (120 °C and lower) and no high-vacuum deposition tools, suitable for applications such as flexible electronics.

In situ endoscopic observation of higher-order mode conversion in a microwave mode converter based on an electro-optic probe system.

Visualizing the electromagnetic field transformation inside a microwave mode conversion region has been considered to be only realizable by simulation studies. For the first time, we present a comprehensive experimental observation of the electric field transformation occurring inside a metallic waveguide TE(01)-to-TE(02) mode converter. An efficient electro-optic (EO) probe and its associated probing system were used for measuring the electric field pattern in the external near-field region as well as in the internal and penetrated region of the mode converter. Utilizing the optically measured field patterns at the aperture of the mode converter, the conversion performance from the TE(01) mode to the TE(02) mode can be also evaluated. Experimentally measured field patterns near the apertures show excellent agreement with simulation data. The mode conversion to the next higher-order mode (TE(01) to TE(02)) was experimentally demonstrated with phase-stabilized and field-animated post processing. The presented in situ endoscopic photonic measurement technique for the field evolution inside a semi-enclosed structure could be used for visually inspecting manufacturing errors in fabricated structures, and could be of great interest for research on higher-order mode formation and transmission.