Conductivity and photoconductivity in a two-dimensional zinc bis(triarylamine) coordination polymer.

We report the synthesis and characterization of a 2D semiconductive and photoconductive coordination polymer. [Zn(TPPB)(Cl2)]·H2O (1) (TPPB = N 1,N 1,N 4,N 4-tetrakis(4-(pyridin-4-yl)phenyl)benzene-1,4-diamine) consists of a TPPB redox-active linker with bis(triarylamine) as the core. It consists of two redox sites connected with a benzene ring as a bridge. Thus, this forms an extended conjugation pathway when the TPPB ligand is coordinated with the Zn2+ metal ions. The single crystal conductivity measurement revealed conductivity of 1 to be in the range of 0.83 to 1.9 S cm-1. Band structure analysis predicted that 1 is a semiconductor from the delocalization of electronic transport in the network. The computational calculations show the difference in charge distribution between holes and electrons, which led to spatial separation. This implies a long charge carrier lifetime as indicated by lifetime measurement. Incorporating a bis(triarylamine)-based redox-active linker could lead to a new semiconductive scaffold material with photocatalytic applications.

Embedment of Multiple Transition Metal Impurities into WS2 Monolayer for Bandstructure Modulation.

Band structure by design in 2D layered semiconductors is highly desirable, with the goal to acquire the electronic properties of interest through the engineering of chemical composition, structure, defect, stacking, or doping. For atomically thin transition metal dichalcogenides, substitutional doping with more than one single type of transition metals is the task for which no feasible approach is proposed. Here, the growth of WS2 monolayer is shown codoped with multiple kinds of transition metal impurities via chemical vapor deposition controlled in a diffusion-limited mode. Multielement embedment of Cr, Fe, Nb, and Mo into the host lattice is exemplified. Abundant impurity states thus generate in the bandgap of the resultant WS2 and provide a robust switch of charging/discharging states upon sweep of an electric filed. A profound memory window exists in the transfer curves of doped WS2 field-effect transistors, forming the basis of binary states for robust nonvolatile memory. The doping technique presented in this work brings one step closer to the rational design of 2D semiconductors with desired electronic properties.

High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In2Se3 nanosheet photodetectors.

Photoconductivities (PCs) with high responsivity in two-dimensional (2D) diindium triselenide (In2Se3) nanostructures with α-phase hexagonal structure were studied. The In2Se3 nanosheet photodetectors fabricated by focused-ion beam technique exhibit broad spectral response with wavelength range from 300 nm to 1000 nm. The In2Se3 nanosheets achieve optimal responsivity of 720 A W-1 in near-infrared region (808 nm), and detectivity of 2.2 × 1012 Jones, which were higher than several 2D material photodetectors. The physical origins that result in high photoresponse in In2Se3 nanosheets such as carrier lifetime and mobility were also characterized by time-resolved PC and field-effect transistor measurements. The fast (hundred microseconds to milliseconds) and slow (seconds and longer) current rise or decay processes were both observed during the photoresponse. The narrowing (or relaxation) of depletion region and oxygen-sensitized photoconduction mechanism were suggested to be the causes of the efficient photoresponse in the In2Se3 nanostructure detectors. All these observations suggest that α-In2Se3 nanosheets could be a promising candidate for photosensitive material applications.

Fabrication of electroactive polypyrrole-tungsten disulfide nanocomposite for enhanced in vivo drug release in mice skin.

The present study focused on the development of electric stimuli drug release carrier based on transition metal dicgalcogenides. First, tungsten disulfide (WS2) was exfoliated and functionalized using thiol chemistry with various thiol-terminated ligands such as thioglycolic acid (TGA), mercaptosuccinic acid (MSA), and 2-ethanethiol (2ET). The exfoliated WS2 underwent non-covalent coating with an electrically conductive polypyrrole (PPy) for functionalization, of which MSA-WS2-PPy achieved the highest 5-FU (anticancer drug) loading. An electrically-stimulated drug release experiment showed that TGA-WS2-PPy achieved a higher drug release (90%) than MSA-WS2-PPy (70%) and 2ET-WS2-Ppy (35%). The TGA-WS2-PPy exhibited swelling/recombination between PPY and MSA-WS2 substrate under electrical stimulation, resulting in the highest 5-FU release. From the MTT assay result, there was no significant toxicity observed for TGA-WS2-PPy-FU on HaCaT cells, indicating the biocompatibility of TGA-WS2-PPy-FU in the absence of electrical stimulation. However, HaCaT cells died when incubated with TGA-WS2-PPy-FU under electrical stimulation. Finally, Raman mapping studies for TGA-WS2-PPy drug release in the skin of nude mice demonstrated that the carrier penetrated deeper into the skin of the mice while other systems failed to exhibit significant effects under electrical stimulation. The present study offers a novel approach in developing a non-invasive electrically-stimulated drug release system based on WS2 and an externally-controlled delivery model.

Ultraefficient Ultraviolet and Visible Light Sensing and Ohmic Contacts in High-Mobility InSe Nanoflake Photodetectors Fabricated by the Focused Ion Beam Technique.

A photodetector using a two-dimensional (2D) low-direct band gap indium selenide (InSe) nanostructure fabricated by the focused ion beam (FIB) technique has been investigated. The FIB-fabricated InSe photodetectors with a low contact resistance exhibit record high responsivity and detectivity to the ultraviolet and visible lights. The optimal responsivity and detectivity up to 1.8 × 107 A W-1 and 1.1 × 1015 Jones, respectively, are much higher than those of the other 2D material-based photoconductors and phototransistors. Moreover, the inherent photoconductivity (PC) quantified by the value of normalized gain has also been discussed and compared. By excluding the contribution of artificial parameters, the InSe nanoflakes exhibit an ultrahigh normalized gain of 3.2 cm2 V-1, which is several orders of magnitude higher than those of MoS2, GaS, and other layer material nanostructures. A high electron mobility at room temperature reaching 450 cm2 V-1 s-1 has been confirmed to be one of the major causes of the inherent superior PC in the InSe nanoflakes. The oxygen-sensitized PC mechanism that enhances carrier lifetime and carrier collection efficiency has also been proposed. This work demonstrates the devices fabricated by the FIB technique using InSe nanostructures for highly efficient broad-band optical sensing and light harvesting, which is critical for development of the 2D material-based ultrathin flexible optoelectronics.

Interplay Between Cr Dopants and Vacancy Clustering in the Structural and Optical Properties of WSe2.

Here, we analyze the effect of Cr doping on WSe2 crystals. The topology and the chemistry of the doped samples have been investigated by atom-resolved scanning transmission electron microscopy combined with electron energy loss spectroscopy. Cr (measured to have formal valence 3+) occupies W sites (formal valence 4+), indicating a possible hole doping. However, single or double Se vacancies cluster near Cr atoms, leading to an effective electron doping. These defects organization can be explained by the strong binding energy of the CrW-Vse complex obtained by density functional theory calculations. In highly Cr-doped samples, a local phase transition from the 2H to the to 1T phase is observed, which has been previously reported for other electron-doped transition-metal dichalcogenides. Cr-doped crystals suffer a compressive strain, resulting in an isotropic lattice contraction and an anisotropic optical bandgap energy shift (25 meV in-plane and 80 meV out-of-plane).

Field Emission Characteristics of the Structure of Vertically Aligned Carbon Nanotube Bundles.

In this study, we performed thermal chemical vapor deposition for growing vertically aligned carbon nanotube (VACNT) bundles for a field emitter and applied photolithography for defining the arrangement pattern to simultaneously compare square and hexagonal arrangements by using two ratios of the interbundle distance to the bundle height (R) of field emitters. The hexagon arrangement with R = 2 had the lowest turn-on electric field (E to) and highest enhancement factor, whereas the square arrangement with R = 3 had the most stable field emission (FE) characteristic. The number density can reveal the correlation to the lowest E to and highest enhancement factor more effectively than can the R or L. The fluorescent images of the synthesized VACNT bundles manifested the uniformity of FE currents. The results of our study indicate the feasibility of applying the VACNT field emitter arrangement to achieve optimal FE performance.

Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

Effects of ion insertion on cycling performance of miniaturized electrochemical capacitor of carbon nanotubes array.

Capacity degradation and ion insertion of a miniaturized electrochemical capacitor are studied using ionic liquid [EMI] [TFSI] as the electrolyte. This capacitor is featured with two comb-like electrodes of vertical carbon nanotubes, ∼70 µm in height and 20 µm in interelectrode gap. We quantify the levels of ion insertion damage with Raman spectroscopy after the electrode experiences 120 consecutive voltammetric cycles to various potential limits. Distinct structural damage emerges due to [EMI] when the negative potential reaches -1.7 V, and those due to [TFSI] arise when the positive potential reaches 1.7 V vs. RHE. Judging from the peak broadenings, [EMI] is more detrimental than [TFSI]. When the voltage window ΔU is set as less than or equal to 2.8 V, both electrode potentials are within the two intercalation limits, little or no decay is observed in 10(4) charge/discharge cycles. When ΔU is 3.4 V, the positive potential exceeds the upper limit, but the negative potential stays within the lower limit, the cell capacitance decreases moderately. When ΔU increases to 3.8 V, both electrodes suffer from damages because of exceeding the intercalation limits. And the cell capacitance decreases substantially, even leading to a premature failure.

Cycle stability of the electrochemical capacitors patterned with vertically aligned carbon nanotubes in an LiPF6-based electrolyte.

The miniature ultracapacitors, with interdigitated electrodes of vertically aligned carbon nanotubes (VACNTs) and an inter-electrode gap of 20 µm, have been prepared in the LiPF6 organic electrolyte with and without PVdF-HFP gel. PVdF-HFP between two opposing electrodes enhances the device reliability, but lessens its power performance because of the extra diffusion resistance. Also noteworthy are the gel influences on the cycle stability. When the applied voltage is 2.0 or 2.5 V, both the LiPF6 and the gel capacitors exhibit excellent stability, typified by a retention ratio of ≥95% after 10,000 cycles. Their coulombic efficiencies quickly rise up, and hold steady at 100%. Nonetheless, when the applied voltage is 3.5 or 4.0 V, the cycle stability deteriorates, since the negative electrode potential descends below 0.9 V (vs. Li), leading to electrolyte decomposition and SEI formation. For the LiPF6 capacitor, its retention ratio could be around 60% after 10,000 cycles and the coulombic efficiency of 100% is difficult to reach throughout its cycle life. On the other hand, the gel capacitor cycles energy with a much higher retention ratio, >80% after 10,000 cycles, and a better coulombic efficiency, even though electrolyte decomposition still occurs. We attribute the superior stability of the gel capacitor to its extra diffusion resistance which slows down the performance deterioration.

Miniature asymmetric ultracapacitor of patterned carbon nanotubes and hydrous ruthenium dioxide.

A symmetric ultracapacitor CNT_CNT and an asymmetric ultracapacitor CNT_hRuO(2) of mini size have been prepared with patterned carbon nanotubes (CNT) and hydrous ruthenium dioxide. Galvanostatic charge/discharge results indicate that CNT_hRuO(2) is the superior one in both power and energy densities. In a potential window 2.0 V, the CNT_hRuO(2) cell displays an energy density of 24.0 W h kg(-1) at a power density of 22.9 kW kg(-1). Its power density can be raised to 41.1 kW kg(-1) at the expense of the energy density, which drops to 6.8 W h kg(-1). On the other hand, CNT_CNT performs at a lower level, delivering 5.2 W h kg(-1) at 5.5 kW kg(-1). The favorable charge/discharge performance of CNT_hRuO(2) is attributed to hydrous RuO(2), whose pseudocapacitance drives the other electrode of the vertical CNT array to work harder and makes more use of its double-layer capacitance. The analysis of individual electrode capacitance indicates that the high capacitance of hRuO(2) also causes a disproportion in voltage partition, which restricts the low limit of cycling current in an extended potential window. On energy cycling, CNT_hRuO(2) demonstrates sufficient stability in 10,000 cycles, after an initial 13% drop in capacitance.

A nanostructured electrode of IrOx foil on the carbon nanotubes for supercapacitors.

IrO(x) nanofoils (IrO(x)NF) of high surface area are sputtered on multi-wall carbon nanotubes (CNT) in the preparation of a structured electrode on a stainless steel (SUS) substrate for supercapacitor applications. This IrO(x)/CNT/SUS electrode is featured with intriguing IrO(x) curved foils of 2-3 nm in thickness and 400-500 nm in height, grown on top of the vertically aligned CNT film with a tube diameter of ∼ 40 nm. These nanofoils are moderately oxidized during reactive sputtering and appeared translucent under the electron microscope. Detailed structural analysis shows that they are comprised of contiguous grains of iridium metal, iridium dioxide, and glassy iridium oxide. Considerable Raman line broadening is also evidenced for the attributed nanosized iridium oxides. Two capacitive properties of the electrode are significantly enhanced with addition of the curved IrO(x) foils. First, IrO(x)NF reduces the electrode Ohmic resistance, which was measured at 3.5 Ω cm(2) for the CNT/SUS and 2.5 Ω cm(2) for IrO(x)NF/CNT/SUS using impedance spectroscopy. Second, IrO(x)NF raises the electrode capacitance from 17.7 F g(-1) (CNT/SUS) to 317 F g(-1) (IrO(x)/CNT/SUS), measured with cyclic voltammetry. This notable increase is further confirmed by the galvanostatic charge/discharge experiment, measuring 370 F g(-1) after 2000 uninterrupted cycles between - 1.0 and 0.0 V (versus Ag/AgCl).

Electron field emission characteristics of different surface morphologies of ZnO nanostructures coated on carbon nanotubes.

The optimal carbon nanotube (CNT) bundles with a hexagonal arrangement were synthesized using thermal chemical vapor deposition (TCVD). To enhance the electron field emission characteristics of the pristine CNTs, the zinc oxide (ZnO) nanostructures coated on CNT bundles using another TCVD technique. Transmission electron microscopy (TEM) images showed that the ZnO nanostructures were grown onto the CNT surface uniformly, and the surface morphology of ZnO nanostructures varied with the distance between the CNT bundle and the zinc acetate. The results of field emissions showed that the ZnO nanostructures grown onto the CNTs could improve the electron field emission characteristics. The enhancement of field emission characteristics was attributed to the increase of emission sites formed by the nanostructures of ZnO grown onto the CNT surface, and each ZnO nanostructure could be regarded as an individual field emission site. In addition, ZnO-coated CNT bundles exhibited a good emission uniformity and stable current density. These results demonstrated that ZnO-coated CNTs is a promising field emitter material.