RESUMO
In this work, acetone gas sensors were fabricated using pre-annealing metal oxide zinc oxide (pa-ZnO)-doped perovskite cesium lead bromide (CsPbBr3). The ZnO nanopowder, before it was doped into CsPbBr3 solution, was first put into a furnace to anneal at different temperatures, and formed the pa-ZnO. The properties of pa-ZnO were different from ZnO. The optimized doping conditions were 2 mg of pa-ZnO nanopowder and pre-annealing at 300 °C. Under these conditions, the highest sensitivity (gas signal current-to-air background current ratio) of the ZnO-doped CsPbBr3 perovskite acetone sensor was 1726. In addition, for the limit test, 100 ppm was the limit of detection of the ZnO-doped CsPbBr3 perovskite acetone sensor and the sensitivity was 101.
RESUMO
Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C60 and an Ag electrode on CH3NH3PbBr3 perovskite crystals to complete a photodetector structure, which exhibits a metal-semiconductor-metal (MSM) type structure. First, CH3NH3PbBr3 perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH3NH3PbBr3 perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH3NH3PbBr3 perovskite crystals were observed to form a contact with the Ag/C60 as the photodetector, which revealed a responsivity of 24.5 A/W.
RESUMO
This investigation reports on the characteristics of MAPbI3 perovskite films on obliquely sputtered ITO/glass substrates that are fabricated with various sputtering times and sputtering angles. The grain size of a MAPbI3 perovskite film increases with the oblique sputtering angle of ITO thin films from 0° to 80°, indicating that the surface properties of the ITO affect the wettability of the PEDOT:PSS thin film and thereby dominates the number of perovskite nucleation sites. The optimal power conversion efficiency (Eff) is achieved 11.3% in a cell with an oblique ITO layer that was prepared using a sputtering angle of 30° for a sputtering time of 15 min.