RESUMO
In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors effectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3-43.9 dBm (21.4-24.5 W), a power-added efficiency of 33.4%-49.7% and a power gain of 6.2-8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz.
RESUMO
In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 µs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz.
RESUMO
In this study, 8 in. wafer-scale flexible polarization-dependent color filters with Ag-TiO2 composite nanowires have been fabricated using nanoimprint and E-beam evaporation. The filters change their color via a simple rotation of the polarizer. In addition, the color of the filter can be controlled by altering the thickness of the Ag and TiO2 nanowires deposited on the polymer patterns. Polarization-dependent color filters were realized by selective inhibition of transmission using the plasmonic resonance at the insulator/metal/insulator nanostructure interface, which occurs at particular wavelengths for the transverse magnetic polarizations. Special colors, including purple, blue, green, yellow, and pink, could be obtained with high transmission beyond 65% by varying the thickness of the deposited Ag and TiO2 nanowires on the periodic polymer pattern under transverse magnetic polarization. In addition, a continuous color change was achieved by varying the polarization angle. Last, numerical simulations were implemented in comparison with the experimental results, and the mechanism was explained. We believe that this simple and cost-effective method can be applied to processes such as anticounterfeiting and holographic imaging as well as to color displays.
