Pinning characteristics of domain wall in giant magnetoresistance spin valve stripe, consisting of a nano-wire and a circular ring.

We investigated a technique for proving the pinning behaviors of a domain wall (DW) in spin-valve stripes with artificial configurations, which consist of a nano-wire, a large pad and sharp tip at the ends of the wire, and a circular ring at the center. It was found from the GMR measurement at various positions that a DW was pinned at a ring during DW's propagation from the side of pad to the side of tip. Micromagnetic simulation revealed that the initial onion magnetic states of the ring changes continuously to final reverse onion state via counterclockwise vortex state when a counterclockwise tail-to-tail DW pass through the ring. In addition, the simulation results indicated that the magnetic states at a circular ring were determined by the type and chirality of DW. We also studied the characteristics of domain wall motion in the same configuration, when the nano-ring was replaced with square and diamond structures.

Diameter-engineered SnO2 nanowires over contact-printed gold nanodots using size-controlled carbon nanopost array stamps.

A novel and effective methodology to control the diameters of semiconductor nanowires is reported through a versatile contact-printing method for obtaining size-controlled nanocatalysts by size-tunable carbon-based nanometer stamps. Vertically aligned carbon nanopost arrays, derived from nanoporous alumina templates, are used as the nanoscale stamps for printing of catalyst nanoparticles. The diameter of the carbon nanopost can be engineered by adjusting the pore dimension of the templates. Over the contact-printed Au nanodots in a uniform size distribution, semiconductor SnO2 nanowires are grown via a vapor-liquid-solid growth mechanism. Consequently, a direct dimension correspondence is achieved between the carbon nanopost stamp, the printed Au catalyst, and the finally obtained SnO2 nanowires. A model example of the diameter-dependent electrical properties of the semiconductor nanowires is successfully demonstrated in this work by applying three diameter-controlled SnO2 nanowires to nanowire field effect transistors.

Current-induced domain wall nucleation and its pinning characteristics at a notch in a spin-valve nanowire.

The characteristics of domain wall (DW) pinning at a notch in a spin-valve nanowire were investigated when a DW was created by a current, flowing into a spin-valve nanowire. It was found that DW pinning at a notch is quite sensitive to the magnitude of the current and its polarity. The current-polarity dependence of DW pinning is likely due to the spin structure in the core of the DW, which is determined by an Oersted field from the current in a Cu layer. This indicates that the control of DW pinning at a notch in a nanowire can be achieved by a current acting on its own, which is an important advantage of this method, compared with field-induced DW control.