Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns.

The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

Tuning optical properties of poly(3-hexylthiophene) nanoparticles through hydrothermal processing.

Poly(3-hexylthiophene) (P3HT) nanoparticles (NPs) were prepared by a reprecipitation method. Hydrothermal processing applied external pressure to the pristine P3HT NPs at temperatures ranging from 60 to 150 °C. Optical absorption and photoluminescence (PL) spectra for the hydrothermally treated P3HT NPs varied markedly with the processing temperature. With increasing treatment temperature, the absorption peak broadened and the peak position shifted from 510 to 623 nm; moreover, the intensity ratio of the 0-1 to 0-0 emission varied. These changes were caused by interactions between the P3HT main chains and alkyl side groups and conformational modifications induced by the high pressure during the hydrothermal process. The evolution of the optical absorption spectra of the P3HT NPs during the hydrothermal processing was strongly correlated with the variation of PL excitation spectra and with the PL emission spectra of a single NP.

Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.