Alkyl Chain Engineering of Low Bandgap Non-Fullerene Acceptors for High-Performance Organic Solar Cells: Branched vs. Linear Alkyl Side Chains.

In this work, we report the synthesis and photovoltaic properties of IEBICO-4F, IEHICO-4F, IOICO-4F, and IDICO-4F non-fullerene acceptors (NFAs) bearing different types of alkyl chains (2-ehtylhexyl (EH), 2-ethylbutyl (EB), n-octyl (O), and n-decyl (D), respectively). These NFAs are based on the central indacenodithiophene (IDT) donor core and the same terminal group of 2-(5,6-difluoro-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (IC-2F), albeit with different side chains appended to the thiophene bridge unit. Although the side chains induced negligible differences between the NFAs in terms of optical band gaps and molecular energy levels, they did lead to changes in their melting points and crystallinity. The NFAs with branched alkyl chains exhibited weaker intermolecular interactions and crystallinity than those with linear alkyl chains. Organic solar cells (OSCs) were fabricated by blending these NFAs with the p-type polymer PTB7-Th. The NFAs with appended branched alkyl chains (IEHICO-4F and IEBICO-4F) possessed superior photovoltaic properties than those with appended linear alkyl chains (IOICO-4F and IDICO-4F). This result can be ascribed mainly to the thin-film morphology. Furthermore, the NFA-based blend films with appended branched alkyl chains exhibited the optimal degree of aggregation and miscibility, whereas the NFA-based blend films with appended linear alkyl chains exhibited higher levels of self-aggregation and lower miscibility between the NFA molecule and the PTB7-Th polymer. We demonstrate that changing the alkyl chain on the π-bridging unit in fused-ring-based NFAs is an effective strategy for improving their photovoltaic performance in bulk heterojunction-type OSCs.

Highly Sensitive and Durable Organic Photodiodes Based on Long-Term Storable NiOx Nanoparticles.

Organic optoelectronic devices that can be fabricated at low cost have attracted considerable attention because they can absorb light over a wide frequency range and have high conversion efficiency, as well as being lightweight and flexible. Moreover, their performance can be significantly affected by the choice of the charge-selective interlayer material. Nonstoichiometric nickel oxide (NiOx) is an excellent material for the hole-transporting layer (HTL) of organic optoelectronic devices because of the good alignment of its valence band position with the highest occupied molecular orbital level of many p-type polymers. Herein, we report a simple low-temperature process for the synthesis of NiOx nanoparticles (NPs) that can be well dispersed in solution for long-term storage and easily used to form thin NiOx NP layers. NiOx NP-based organic photodiode (OPD) devices demonstrated high specific detectivity (D*) values of 1012-1013 jones under various light intensities and negative biases. The D* value of the NiOx NP-based OPD device was 4 times higher than that of a conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)-based device, an enhancement that originated mainly from the 16 times decreased leakage current. The NiOx NP-based OPD device demonstrated better reliability over a wide range of light intensities and operational biases in comparison to a device with a conventional sol-gel-processed NiOx film. More importantly, the NiOx NP-based OPD showed long-term device stability superior to those of the PEDOT:PSS and sol-gel-processed NiOx-based devices. We highlight that our low-temperature solution-processable NiOx NP-based HTL could become a crucial component in the fabrication of stable high-performance OPDs.

Impact of symmetry-breaking of non-fullerene acceptors for efficient and stable organic solar cells.

The concurrent enhancement of short-circuit current (J SC) and open-circuit voltage (V OC) is a key problem in the preparation of efficient organic solar cells (OSCs). In this paper, we report efficient and stable OSCs based on an asymmetric non-fullerene acceptor (NFA) IPC-BEH-IC2F. The NFA consists of a weak electron-donor core dithienothiophen[3,2-b]-pyrrolobenzothiadiazole (BEH) and two kinds of strong electron-acceptor (A) units [9H-indeno[1,2-b]pyrazine-2,3-dicarbonitrile (IPC) with a tricyclic fused system and 2-(5,6-difluoro-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (IC2F)]. For comparison, the symmetric NFAs IPC-BEH-IPC and IC2F-BEH-IC2F were characterised. The kind of flanking A unit significantly affects the light absorption features and electronic structures of the NFAs. The asymmetric IPC-BEH-IC2F has the highest extinction coefficient among the three NFAs owing to its strong dipole moment and highly crystalline feature. Its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels lie between those of the IPC-BEH-IPC and IC2F-BEH-IC2F molecules. The IPC group also promotes molecular packing through the tricyclic π-conjugated system and achieves increased crystallinity compared to that of the IC2F group. Inverted-type photovoltaic devices based on p-type polymer:NFA blends with PBDB-T and PM6 polymers as p-type polymers were fabricated. Among all these devices, the PBDB-T:IPC-BEH-IC2F blend device displayed the best photovoltaic properties because the IPC unit provides balanced electronic and morphological characteristics. More importantly, the PBDB-T:IPC-BEH-IC2F-based device exhibited the best long-term stability owing to the strongly interacting IPC moiety and the densely packed PBDB-T:IPC-BEH-IC2F film. These results demonstrate that asymmetric structural modifications of NFAs are an effective way for simultaneously improving the photovoltaic performance and stability of OSCs.