RESUMO
The global quantum internet will require long-lived, telecommunications-band photon-matter interfaces manufactured at scale1. Preliminary quantum networks based on photon-matter interfaces that meet a subset of these demands are encouraging efforts to identify new high-performance alternatives2. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits3. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work, we integrate individually addressable 'T centre' photon-spin qubits in silicon photonic structures and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
RESUMO
SrTiO_{3} exhibits a superconducting dome upon doping with Nb, with a maximum critical temperature T_{c}≈0.4 K. Using microwave stripline resonators at frequencies from 2 to 23 GHz and temperatures down to 0.02 K, we probe the low-energy optical response of superconducting SrTiO_{3} with a charge carrier concentration from 0.3 to 2.2×10^{20} cm^{-3}, covering the majority of the superconducting dome. We find single-gap electrodynamics even though several electronic bands are superconducting. This is explained by a single energy gap 2Δ due to gap homogenization over the Fermi surface consistent with the low level of defect scattering in Nb-doped SrTiO_{3}. Furthermore, we determine T_{c}, 2Δ, and the superfluid density as a function of charge carrier concentration, and all three quantities exhibit the characteristic dome shape.
