Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers.

The influence of the insertion of an ultrathin NiO layer between the MgO barrier and the ferromagnetic electrodes in magnetic tunnel junctions has been investigated from measurements of the tunneling magnetoresistance and via x-ray magnetic circular dichroism (XMCD). The magnetoresistance shows a high asymmetry with respect to bias voltage, giving rise to a negative value of up to -16% at 2.8 K. We attribute this effect to the formation of noncollinear spin structures at the interface of the NiO layer as inferred from XMCD measurements. The magnetic moments of the interface Ni atoms tilt from their easy axis due to exchange coupling with the neighboring ferromagnetic electrode, and the tilting angle decreases with increasing NiO thickness. The experimental observations are further supported by noncollinear spin density functional calculations.

Enhancing exchange bias with diluted antiferromagnets.

The exchange bias H(E) of coupled polycrystalline films of antiferromagnetic CoO and ferromagnetic Co was significantly enhanced by the systematic substitution of nonmagnetic Mg for Co in CoO. Samples in which either Co or Co(1-x)Mg(x)O were deposited first were investigated at temperatures from 10 to 300 K. With Co(1-x)Mg(x)O on the bottom, the increased interfacial uncompensated spin density of the single antiferromagnetic domain Co(1x)Mg(x)O crystallites produced the enhanced H(E). With Co on the bottom, a thin interfacial oxide layer was primarily responsible for the strongly increased H(E).