Effects of Cu Precursor on the Performance of Efficient CdTe Solar Cells.

Copper (Cu) incorporation is a key process for fabricating efficient CdTe-based thin-film solar cells and has been used in CdTe-based solar cell module manufacturing. Here, we investigate the effects of different Cu precursors on the performance of CdTe-based thin-film solar cells by incorporating Cu using a metallic Cu source (evaporated Cu) and ionic Cu sources (solution-processed cuprous chloride (CuCl) and copper chloride (CuCl2)). We find that ionic Cu precursors offer much better control in Cu diffusion than the metallic Cu precursor, producing better front junction quality, lower back-barrier heights, and better bulk defect property. Finally, outperforming power conversion efficiencies of 17.2 and 17.5% are obtained for devices with cadmium sulfide and zinc magnesium oxide as the front window layers, respectively, which are among the highest reported CdTe solar cells efficiencies. Our results suggest that an ionic Cu precursor is preferred as the dopant to fabricate efficient CdTe thin-film solar cells and modules.

Defect characterization by differential capacitance spectroscopy without the Arrhenius plot.

A new method of Arrhenius transformation and matching is developed in this study based on the rate-temperature duality of the admittance spectroscopy measurement to extract the activation energy Ea and the attempt-to-escape frequency ν0 of a defect in GaAsN from differential capacitance spectroscopy without the Arrhenius plot and without identifying the fdC/df spectra peaks. The method consists of a set of variations that transform the iso-rate scan and/or the isothermal scan to a virtual space-activation energy, attempt-to-escape frequency, temperature, or rate. The transformed scans must be matched prior to extracting Ea and ν0 local to a fixed point in the two-dimensional temperature-rate experimental space.

Deep level transient spectroscopy characterization without the Arrhenius plot.

Defect characterization by deep level transient spectroscopy (DLTS) requires the extraction of two key quantities of the carrier emission rate from the defects-activation energy (Ea) and pre-exponential factor (ν0)-the latter is related to the carrier capture cross section. This task, ubiquitous to thermally activated processes besides defect-carrier interaction, is traditionally accomplished by constructing an Arrhenius plot with DLTS peak locations and fitting it with a line. We present a transformation method based on the Arrhenius equation that extracts Ea and ν0without constructing or line-fitting the Arrhenius plot and bypasses peak identification. This method is developed on the basis of the fundamental temperature-rate duality relationship and extracts Ea and ν0 by matching the curvatures the Arrhenius-transformed spectra of the iso-thermal and iso-rate DLTS scans in the 2D temperature-rate plane. The extraction can be conducted with data in a small temperature range and is, therefore, capable of unambiguously resolving Ea and ν0 at any temperature point and their temperature dependence, if any.

Incomplete Ionization of a 110 meV Unintentional Donor in ß-Ga2O3 and its Effect on Power Devices.

Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional doping in Ga2O3. Previously unobserved unintentional donors in commercially available [Formula: see text] Ga2O3 substrates have been electrically characterized via temperature dependent Hall effect measurements up to 1000 K and found to have a donor energy of 110 meV. The existence of the unintentional donor is confirmed by temperature dependent admittance spectroscopy, with an activation energy of 131 meV determined via that technique, in agreement with Hall effect measurements. With the concentration of this donor determined to be in the mid to high 1016 cm-3 range, elimination of this donor from the drift layer of Ga2O3 power electronics devices will be key to pushing the limits of device performance. Indeed, analytical assessment of the specific on-resistance (Ronsp) and breakdown voltage of Schottky diodes containing the 110 meV donor indicates that incomplete ionization increases Ronsp and decreases breakdown voltage as compared to Ga2O3 Schottky diodes containing only the shallow donor. The reduced performance due to incomplete ionization occurs in addition to the usual tradeoff between Ronsp and breakdown voltage.

Co-solvent enhanced zinc oxysulfide buffer layers in Kesterite copper zinc tin selenide solar cells.

A co-solvent, dimethylsulfoxide (DMSO), is added to the aqueous chemical "bath" deposition (CBD) process used to grow ZnOS buffer layers for thin film Cu2ZnSnSe4 (CZTSe) solar cells. Device performance improves markedly as fill factors increase from 0.17 to 0.51 upon the co-solvent addition. X-ray photoelectron spectroscopy (XPS) analyses are presented for quasi-in situ CZTSe/CBD-ZnOS interfaces prepared under an inert atmosphere and yield valence band offsets equal to -1.0 eV for both ZnOS preparations. When combined with optical band gap data, conduction band offsets exceed 1 eV for the water and the water/DMSO solutions. XPS measurements show increased downward band bending in the CZTSe absorber layer when the ZnOS buffer layer is deposited from water only. Admittance spectroscopy data shows that the ZnOS deposited from water increases the built-in potential (Vbi) yet these solar cells perform poorly compared to those made with DMSO added. The band energy offsets imply an alternate form of transport through this junction. Possible mechanisms are discussed, which circumvent the otherwise large conduction band spike between CZTSe and ZnOS, and improve functionality with the low-band gap absorber, CZTSe (Eg = 0.96 eV).

Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.

The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

Dependence of the minority-carrier lifetime on the stoichiometry of CdTe using time-resolved photoluminescence and first-principles calculations.

CdTe is one of the most promising materials for thin-film solar cells. However, further improvement of its performance is hindered by its relatively short minority-carrier lifetime. Combining theoretical calculations and experimental measurements, we find that for both intrinsic CdTe and CdTe solar cell devices, longer minority-carrier lifetimes can be achieved under Cd-rich conditions, in contrast to the previous belief that Te-rich conditions are more beneficial. First-principles calculations suggest that the dominant recombination centers limiting the minority-carrier lifetime are the Te antisite and Te interstitial. Therefore, we propose that to optimize the solar cell performance, extrinsic p-type doping (e.g., N, P, or As substitution on Te sites) in CdTe under Cd-rich conditions should be a good approach to simultaneously increase both the minority-carrier lifetime and hole concentration.

Measuring temperature-dependent activation energy in thermally activated processes: a 2D Arrhenius plot method.

Thermally activated processes are characterized by two key quantities, activation energy (E(a)) and pre-exponential factor (nu(0)), which may be temperature dependent. The accurate measurement of E(a), nu(0), and their temperature dependence is critical for understanding the thermal activation mechanisms of non-Arrhenius processes. However, the classic 1D Arrhenius plot-based methods cannot unambiguously measure E(a), nu(0), and their temperature dependence due to the mathematical impossibility of resolving two unknown 1D arrays from one 1D experimental data array. Here, we propose a 2D Arrhenius plot method to solve this fundamental problem. Our approach measures E(a) at any temperature from matching the first and second moments of the data calculated with respect to temperature and rate in the 2D temperature-rate plane, and therefore is able to unambiguously solve E(a), nu(0), and their temperature dependence. The case study of deep level emission in a Cu(In,Ga)Se(2) solar cell using the 2D Arrhenius plot method reveals clear temperature dependent behavior of E(a) and nu(0), which has not been observable by its 1D predecessors.