Polarization state generation and measurement with a single metasurface.

The constituent elements of metasurfaces may be designed with explicit polarization dependence, making metasurfaces a fascinating platform for new polarization optics. In this work we show that a metasurface grating can be designed to produce arbitrarily specified polarization states on a set of defined diffraction orders given that the polarization of the incident beam is known. We also demonstrate that, when used in a reverse configuration, the same grating may be used as a parallel snapshot polarimeter, requiring a minimum of bulk polarization optics. We demonstrate its use in measuring partially polarized light, and show that it performs favorably in comparison to a commercial polarimeter. This work is of consequence in any application requiring lightweight, compact, and low-cost polarization optics, polarimetry, or polarization imaging.

Two-step phase shifting differential-recording digital holographic microscopy.

We present two-step phase-shifting differential-recording digital holographic microscopy (TPD-DH in microscopy) for phase imaging of microscopic transparent elements. Two CCDs are employed to record two interferograms at two different defocusing distances. The interferograms on the two CCD cameras are shifted for a phase retarder 0 and π via an all-optics phase shifting unit. A novel algorithm is proposed to reconstruct both amplitude and phase distributions of the object wave from the recorded interferograms. This method has the same spectrum bandwidth and measurement accuracy with those of conventional four-step phase-shifting interferometry (FS-PSI), whereas it reduces the measurement time by half.

Morphology and Optical Properties of RF Sputtering Deposited Indium Nitride Layers Under Different N2/Ar Ratio.

InN thin films were prepared using reactive radio frequency sputtering on (111) Si substrates under different N2/Ar ratio. The surface morphology and optical properties of InN thin films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscope, energy dispersive spectrometer, and UV-visible-NIR spectrophotometer at room temperature. It was found that the growth rate and surface RMS roughness of InN layers all significantly decreased with the increasing of N2 content in the sputtering gas. All the InN films were wurtzite structure with the proportion of N2 increasing from 40% to 100% in the mixture gas. The highly c-axis orientation InN films could only be obtained in the composition ratios of N2 higher than 90%. The atomic percentage of N is much higher than that of In at high N2 content films, which mainly due to the chemical reaction on the surface of Si substrate. The apparent optical band gap energy is estimated at 1.83 eV. However, the InN absorption band tail is strongly influenced by the sputtering due to a change in the species of the plasma.