Manipulation of the Self-Assembly Morphology by Side-Chain Engineering of Quinoxaline-Substituted Organic Photothermal Molecules for Highly Efficient Solar-Thermal Conversion and Applications.

Organic photothermal materials have attracted increasing attention because of their structural diversity, flexibility, and compatibility. However, their energy conversion efficiency is limited owing to the narrow absorption spectrum, strong reflection/transmittance, and insufficient nonradiative decay. In this study, two quinoxaline-based D-A-D-A-D-type molecules with ethyl (BQE) or carboxylate (BQC) substituents were synthesized. Strong intramolecular charge transfer provided both molecules with a broad absorption range of 350-1000 nm. In addition, the high reorganization energy and weak molecular packing of BQE resulted in efficient nonradiative decay. More importantly, the self-assembly of BQE leads to a textured surface and enhances the light-trapping efficiency with significantly reduced light reflection/transmittance. Consequently, BQE achieved an impressive solar-thermal conversion efficiency of 18.16 % under 1.0 kW m-2 irradiation with good photobleaching resistance. Based on this knowledge, the water evaporation rate of 1.2 kg m-2 h-1 was attained for the BQE-based interfacial evaporation device with an efficiency of 83 % under 1.0 kW m-2 simulated sunlight. Finally, the synergetic integration of solar-steam and thermoelectric co-generation devices based on BQE was realized without significantly sacrificing solar-steam efficiency. This underscores the practical applications of BQE-based technology in effectively harnessing photothermal energy. This study provides new insights into the molecular design for enhancing light-trapping management by molecular self-assembly, paving the way for photothermal-driven applications of organic photothermal materials.

Organic Transistor Nonvolatile Memory with Three-Level Information Storage and Optical Detection Functions.

By the current processing technology, it is a challenge to obtain ultrahigh-density information storage in the conventional binary floating-gate-based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs). To develop a multilevel memory in one cell is a feasible solution. In this work, we demonstrate FG-OFET NVMs with an integrated polymer floating-gate/tunneling (I-FG/T) layer consisting of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and polystyrene. The photoelectric effect of organic/polymer semiconductors is used to improve the controllability of the polarity and the number of the charges stored in the floating-gate. The FG-OFET NVMs integrate light sensitivity and nonvolatile information storage functions. By selecting suitable optical and electrical programming/erasing conditions, three-level information storage states, corresponding to electron storage, approximate neutrality, and hole storage in the floating-gate, are achieved and freely switched to each other. The memory mechanism and the dependence of the memory performances on the F8BT contents in I-FG/T layers are investigated. As a result, good memory performances, with mobility larger than 1.0 cm2 V-1 s-1, reliable three-level switching endurance over 100 cycles, and stable three-level retention capability over 20 000 s, are achieved in our memory. Furthermore, an imaging system with a nonvolatile information storage function is demonstrated in a 16 × 5 array of FG-OFET NVMs.