Efficient blue light emission from In0.16Ga0.84N/GaN multiple quantum wells excited by 2.48-µm femtosecond laser pulses.

We report on the efficient blue light emission from In0.16Ga0.84N/GaN multiple quantum wells excited by femtosecond laser pulses with long wavelengths ranging from 1.24 to 2.48 µm. It is found that the trap states in GaN barrier layers lead to an efficient cascade multiphoton absorption in which the carriers are generated through simultaneous absorption of n (n=1 and 2) photons to the trap states, followed by simultaneous absorption of m (m=3, 4, and 5) photons to the conduction band. The dependence of the upconversion luminescence on excitation intensity exhibits a slope between n and n+m, which is in good agreement with the prediction based on the rate equation model.

Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer.

An InGaN/GaN blue light-emitting diode (LED) structure and an InGaN/GaN blue-violet LED structure were grown sequentially on the same sapphire substrate by metal-organic chemical vapor deposition. It was found that the insertion of an n-type AlGaN layer below the dual blue-emitting active layers showed better spectral stability at the different driving current relative to the traditional p-type AlGaN electron-blocking layer. In addition, color rendering index of a Y3Al5O12:Ce3+ phosphor-converted white LED based on a dual blue-emitting chip with n-type AlGaN reached 91 at 20 mA, and Commission Internationale de L'Eclairage coordinates almost remained at the same point from 5 to 60 mA.