Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer.

In this paper, a structure design using quaternary AlInGaN as multiple-symmetrical-stair-shaped quantum barriers without an electron blocking layer is shown. The results show this design mitigates the droop effect to ∼0.1%, and the internal quantum efficiency reaches about 93.4%. It is believed that the better performance results from balanced electron and hole concentration and distribution of the current among the quantum wells, along with reduced non-radiative recombination. This work may be useful in the application of using quaternary AlInGaN materials as quantum barrier layers with computational simulations to design structures with electron-barrier-free layers.