Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4.

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4.

The recently discovered antiferromagnetic (AFM) topological insulator (TI) MnBi2Te4 represents a versatile material platform for exploring exotic topological quantum phenomena in nanoscale devices. It has been proposed that even-septuple-layer (even-SL) MnBi2Te4 can host helical hinge currents with unique nonlocal behavior, but experimental confirmation is still lacking. In this work, we report transport studies of exfoliated MnBi2Te4 flakes with varied thicknesses down to the few-nanometer regime. We observe giant nonlocal transport signals in even-SL devices when the system is in the axion insulator state but vanishingly small nonlocal signal in the odd-SL devices at the same magnetic field range. In conjunction with theoretical calculations, we demonstrate that the nonlocal transport is via the helical edge currents mainly distributed at the hinges between the side and top/bottom surfaces. The helical edge currents in the axion insulator state may find unique applications in topological quantum devices.

Direct visualization of edge state in even-layer MnBi2Te4 at zero magnetic field.

Being the first intrinsic antiferromagnetic (AFM) topological insulator (TI), MnBi2Te4 is argued to be a topological axion state in its even-layer form due to the antiparallel magnetization between the top and bottom layers. Here we combine both transport and scanning microwave impedance microscopy (sMIM) to investigate such axion state in atomically thin MnBi2Te4 with even-layer thickness at zero magnetic field. While transport measurements show a zero Hall plateau signaturing the axion state, sMIM uncovers an unexpected edge state raising questions regarding the nature of the "axion state". Based on our model calculation, we propose that the edge state of even-layer MnBi2Te4 at zero field is derived from gapped helical edge states of the quantum spin Hall effect with time-reversal-symmetry breaking, when a crossover from a three-dimensional TI MnBi2Te4 to a two-dimensional TI occurs. Our finding thus signifies the richness of topological phases in MnB2Te4 that has yet to be fully explored.

Helical Luttinger Liquid on the Edge of a Two-Dimensional Topological Antiferromagnet.

A boundary helical Luttinger liquid (HLL) with broken bulk time-reversal symmetry belongs to a unique topological class that may occur in antiferromagnets (AFM). Here, we search for signatures of HLL on the edge of a recently discovered topological AFM, MnBi2Te4 even-layer. Using a scanning superconducting quantum interference device, we directly image helical edge current in the AFM ground state appearing at its charge neutral point. Such a helical edge state accompanies an insulating bulk which is topologically distinct from the ferromagnetic Chern insulator phase, as revealed in a magnetic field driven quantum phase transition. The edge conductance of the AFM order follows a power law as a function of temperature and source-drain bias which serves as strong evidence for HLL. Such HLL scaling is robust at finite fields below the quantum critical point. The observed HLL in a layered AFM semiconductor represents a highly tunable topological matter compatible with future spintronics and quantum computation.