Stabilities and novel electronic structures of three carbon nitride bilayers.

We predict three novel phases of the carbon nitride (CN) bilayer, denoted α-C2N2, ß-C2N2 and γ-C4N4, respectively. All of them consist of two CN sheets connected by C-C covalent bonds. The phonon dispersions reveal that all these phases are dynamically stable, because no imaginary frequency is present. The transition pathway between α-C2N2 and ß-C2N2 is investigated, which involves bond-breaking and bond-reforming between C and N. This conversion is difficult, since the activation energy barrier is 1.90 eV per unit cell, high enough to prevent the transformation at room temperature. Electronic structure calculations show that all three phases are semiconductors with indirect band gaps of 3.76/5.22 eV, 4.23/5.75 eV and 2.06/3.53 eV, respectively, by PBE/HSE calculation. The ß-C2N2 has the widest band gap among the three phases. All three bilayers can become metallic under tensile strain, and the indirect gap of γ-C4N4 can turn into a direct one. γ-C4N4 can become an anisotropic Dirac semimetal under uniaxial tensile strain. Anisotropic Dirac cones with high Fermi velocity of the order of 105 m/s appear under 12% strain. Our results suggest that the three two-dimensional materials have potential applications in electronics, semiconductors, optics and spintronics.

Electronic Structure and Band Gap Engineering of Two-Dimensional Octagon-Nitrogene.

A new phase of nitrogen with octagon structure has been predicted in our previous study, which we referred to as octagon-nitrogene (ON). In this work, we make further investigations of its stability and electronic structures. The phonon dispersion has no imaginary phonon modes, which indicates that ON is dynamically stable. Using ab initio molecular dynamic simulations, this structure is found to be stable up to room temperature and possibly higher, and ripples that are similar to that of graphene are formed on the ON sheet. Based on the density functional theory calculation, we find that single layer ON is a two-dimension wide gap semiconductor with an indirect band gap of 4.7 eV. This gap can be decreased by stacking due to the interlayer interactions. Biaxial tensile strain and perpendicular electric field can greatly influence the band structure of ON, in which the gap decreases and eventually closes as the biaxial tensile strain or the perpendicular electric field increases. In other words, both biaxial tensile strain and a perpendicular electric field can drive the insulator-to-metal transition, and thus can be used to engineer the band gap of ON. From our results, we see that ON has potential applications in many fields, including electronics, semiconductors, optics and spintronics.

Fast identification of the conduction-type of nanomaterials by field emission technique.

There are more or less dopants or defects existing in nanomaterials, so they usually have different conduct-types even for the same substrate. Therefore, fast identification of the conduction-type of nanomaterials is very essential for their practical application in functional nanodevices. Here we use the field emission (FE) technique to research nanomaterials and establish a generalized Schottky-Nordheim (SN) model, in which an important parameter λ (the image potential factor) is first introduced to describe the effective image potential. By regarding λ as the criterion, their energy-band structure can be identified: (a) λ = 1: metal; (b) 0.5 < λ < 1: n-type semiconductor; (c) 0 < λ < 0.5: p-type semiconductor. Moreover, this method can be utilized to qualitatively evaluate the doping-degree for a given semiconductor. We test numerically and experimentally a group of nanomaterial emitters and all results agree with our theoretical results very well, which suggests that our method based on FE measurements should be an ideal and powerful tool to fast ascertain the conduction-type of nanomaterials.

Quantum Szilard engines with arbitrary spin.

The quantum Szilard engine (QSZE) is a conceptual quantum engine for understanding the fundamental physics of quantum thermodynamics and information physics. We generalize the QSZE to an arbitrary spin case, i.e., a spin QSZE (SQSZE), and we systematically study the basic physical properties of both fermion and boson SQSZEs in a low-temperature approximation. We give the analytic formulation of the total work. For the fermion SQSZE, the work might be absorbed from the environment, and the change rate of the work with temperature exhibits periodicity and even-odd oscillation, which is a generalization of a spinless QSZE. It is interesting that the average absorbed work oscillates regularly and periodically in a large-number limit, which implies that the average absorbed work in a fermion SQSZE is neither an intensive quantity nor an extensive quantity. The phase diagrams of both fermion and boson SQSZEs give the SQSZE doing positive or negative work in the parameter space of the temperature and the particle number of the system, but they have different behaviors because the spin degrees of the fermion and the boson play different roles in their configuration states and corresponding statistical properties. The critical temperature of phase transition depends sensitively on the particle number. By using Landauer's erasure principle, we give the erasure work in a thermodynamic cycle, and we define an efficiency (we refer to it as information-work efficiency) to measure the engine's ability of utilizing information to extract work. We also give the conditions under which the maximum extracted work and highest information-work efficiencies for fermion and boson SQSZEs can be achieved.

Generalized Fowler-Nordheim theory of field emission of carbon nanotubes.

Based on the low-energy band structure of carbon nanotubes (CNs), we develop a generalized Fowler-Nordheim theory of the CN field emission, in which the behavior of the current-voltage (I-V) characteristics depends on the electric field and the diameter of the CNs. This formalism reveals the key differences of field emission between conventional bulk metallic emitters and low-dimensional emitters and gives a clear physical understanding of the non-Fowler-Nordheim feature of the I-V characteristics of the CN field emission.