Multifunctional Flexible Ferroelectric Thin Films with Large Electrocaloric Effect and High Energy Storage Performance.

Flexible ferroelectric films with high polarization hold great promise for energy storage and electrocaloric (EC) refrigeration. Herein, we fabricate a lead-free Mn-modified 0.75 Bi(Mg0.5Ti0.5)O3-0.25 BaTiO3 (BMT-BTO) thin film based on a flexible mica substrate. Excellent EC performance with maximum adiabatic temperature change (ΔT ∼23.5 K) and isothermal entropy change (ΔS ∼33.1 J K-1 kg-1) is achieved in the flexible BMT-BTO film, which is attributed to the local structural transition and lattice disorder near 90 °C. Meanwhile, a good energy storage density of ∼70.6 J cm-3 and a quite high efficiency of ∼82% are realized in the same ferroelectric film, accompanied by excellent stability of frequency and electric fatigue (500-10 kHz and 108 cycles). Furthermore, there is no apparent variation in performance under different bending strains. These prominent properties indicate that the multifunctional BMT-BTO ferroelectric film is a promising candidate for applications of flexible energy storage and EC refrigeration.

Periodic Ferroelectric Stripe Domains in α-In2Se3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition.

The two-dimensional (2D) layered semiconductor α-In2Se3 has aroused great interest in atomic-scale ferroelectric transistors, artificial synapses, and nonvolatile memory devices due to its distinguished 2D ferroelectric properties. We have synthesized α-In2Se3 nanosheets with rare in-plane ferroelectric stripe domains at room temperature on mica substrates using a reverse flow chemical vapor deposition (RFCVD) method and optimized growth parameters. This stripe domain contrast is found to be strongly correlated to the stacking of layers, and the interrelated out-of-plane (OOP) and in-plane (IP) polarization can be manipulated by mapping the artificial domain structure. The acquisition of amplitude and phase hysteresis loops confirms the OOP polarization ferroelectric property. The emergence of striped domains enriches the variety of the ferroelectric structure types and novel properties of 2D In2Se3. This work paves a new way for the controllable growth of van der Waals ferroelectrics and facilitates the development of novel ferroelectric memory device applications.

Interlayer Coupling Enhanced Energy Storage Performance in a Flexible BMT-BTO/BMT Multilayer Ferroelectric Film Capacitor.

Flexible ferroelectric capacitors with high energy density and storage efficiency are highly desirable in the next generation of flexible electronic devices. To develop high-performance ferroelectric capacitors, a conventional approach is chemical modification. Here, a novel approach of interlayer coupling is proposed to achieve high energy storage performance in BiMg0.5Ti0.5O3-BaTiO3/BiMg0.5Ti0.5O3 (BMT-BTO/BMT)N multilayer ferroelectric films fabricated on flexible mica substrates via a sol-gel coating method. The interlayer electrostatic coupling between the ferroelectric BMT and relaxor ferroelectric BMT-BTO layers leads to small remnant polarization and large breakdown field strength, resulting in an outstanding energy storage density of ∼106.8 J cm-3 and a good efficiency of ∼75.6% in the multilayer thin films. Further, the energy storage performance remains stable in a wide range of temperatures (25-200 °C) and frequencies (500 Hz to 10 kHz) after 108 electrical loading cycles. The energy storage performance also has no obvious deterioration when the multilayer film experiences 104 mechanical bending cycles with a bending radius of 4 mm. The approach proposed in the present work should be generally implementable in other multilayer flexible ferroelectric capacitors and offers a novel avenue to enhance energy storage performance by tuning the interlayer coupling.