RESUMO
A concept for molecular electronics exploiting carbon nanotubes as both molecular device elements and molecular wires for reading and writing information was developed. Each device element is based on a suspended, crossed nanotube geometry that leads to bistable, electrostatically switchable ON/OFF states. The device elements are naturally addressable in large arrays by the carbon nanotube molecular wires making up the devices. These reversible, bistable device elements could be used to construct nonvolatile random access memory and logic function tables at an integration level approaching 10(12) elements per square centimeter and an element operation frequency in excess of 100 gigahertz. The viability of this concept is demonstrated by detailed calculations and by the experimental realization of a reversible, bistable nanotube-based bit.
RESUMO
Nanoscale electromechanical systems-nanotweezers-based on carbon nanotubes have been developed for manipulation and interrogation of nanostructures. Electrically conducting and mechanically robust carbon nanotubes were attached to independent electrodes fabricated on pulled glass micropipettes. Voltages applied to the electrodes closed and opened the free ends of the nanotubes, and this electromechanical response was simulated quantitatively using known nanotweezer structure and nanotube properties. The mechanical capabilities of the nanotweezers were demonstrated by grabbing and manipulating submicron clusters and nanowires. The conducting nanotube arms of the tweezers were also used for measuring the electrical properties of silicon carbide nanoclusters and gallium arsenide nanowires.
RESUMO
A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
RESUMO
Atomic force microscopy was used to characterize the sliding of molybdenum oxide (MoO3) nanocrystals on single-crystal molybdenum disulfide (MoS2) surfaces. Highly anisotropic friction was observed whereby MoO3 nanocrystals moved only along specific directions of the MoS2 surface lattice. The energy per unit area to move the MoO3 nanocrystals along their preferred sliding direction was an order of magnitude less than required to slide macroscopic MoS2-bearing contacts. This extreme friction anisotropy was exploited to fabricate multicomponent MoO3 nanostructures. These reversibly interlocking structures could serve as the basis for devices such as mechanical logic gates.
