RESUMO
A new piezoelectric actuator design, called "Stake" actuator, is proposed and demonstrated in this paper. As an example, the stake actuator is made of four d32 -mode PZN-5.5%PT single crystals (SCs), each of 25 mm ( L ) ×8 mm ( W ) ×0.4 mm (T) in dimensions, bonded with the aid of polycarbonate edge guide-cum-stiffeners into a square-pipe configuration for improved bending and twisting strengths and capped with top and bottom pedestals made of 1.5-mm-thick anodized aluminum. The resultant stake actuator measured 9 mm ×9 mm ×28 mm. The hollow structure is a key design feature, which optimizes SC usage efficiency and lowers the overall cost of the actuator. The displacement-voltage responses, blocking forces, resonance characteristics of the fabricated stake actuator, as well as the load and temperature effects, are measured and discussed. Since d32 is negative for [011]-poled SC, the "Stake" actuator contracts in the axial direction when a positive-polarity field is applied to the crystals. Biased drive is thus recommended when extensional displacement is desired. The SC stake actuator has negligible (<1%) hysteresis and a large linear strain range of >0.13% when driven up to +300 V (i.e., 0.75 kV/mm), which is close to the rhombohedral-to-orthorhombic transformation field ( ERO ) of 0.85 kV/mm of the SC used. The stake actuator displays a stroke of [Formula: see text] (at +300 V) despite its small overall dimensions, and has a blocking force of 114 N. The SC d32 stake actuator fabricated displays more than 30% larger axial strain than the state-of-the-art PZT stack actuators of comparable length as well as moderate blocking forces. Said actuators are thus ideal for applications when large displacements with simple open-loop control are preferred.
RESUMO
Solid-solution Pb(Zn(1/3)Nb(2/3))O(3)-PbTiO(3) (PZN-PT) single crystals, touted as next-generation piezoelectric materials, have been studied extensively in the past decade. This work addresses the advantages and limitations of transducers made of transverse mode PZN-(6-7)%PT single crystals of [110](L) X [001](T)(P) cut. This cut exhibits superior electromechanical properties, with k(31) ≈ 0.85 and d(31) ≈-1450 pC/N, and an extremely high d(31)/S(E)(11) value of >35 C/m(2). It also has relatively high overpoling, i.e., rhombohedralto- tetragonal phase transformation, field of ≈2 kV/mm. This overpoling field further decreases with increase in axial compressive stress. Despite these good attributes, this crystal cut has a low depoling field of ≤ 0.3 kV/mm, a result of low coercive fields of [001]-poled relaxor-based single crystals, which decreases further with increasing axial compressive stress, limiting its bipolar drive capability. The axial compressive stress required to cause overpoling via rhombohedral-to-tetragonal phase transformation of relevant domain variants in the crystal is found to be >90 MPa. In contrast, this crystal cut depolarizes at comparatively low axial tensile stress of ≈15 MPa, the magnitude of which is not significantly affected by the moderate forward field applied.
RESUMO
The shear resonance behavior of rectangular-shaped samples of single-domain PZN-PT single crystal samples of 3m symmetry and having three faces parallel to the (111), (112), and (110) crystal planes has been examined. Sample geometries with separable resonance peaks are identified, which give shear properties consistent with 3m symmetry, namely, k15 approximately k24 and d15 approximately d24. Sample geometries with inseparable resonance peaks are also distinguished. The latter sample geometries are not suitable for shear property characterization of piezoelectric single crystals of 3m symmetry as the broad coupled resonance peak often results in inflated k15 and d15 values.
RESUMO
Relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O(3-x)PbTiO(3) (PZN-PT) and Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)(PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K(T)) approximately equal to 7000, piezoelectric coefficients (d(33)) approximately equal to 2800 pC/N, and electromechanical coupling factors (k(33)) > or = 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K(T) > or = 5000, d(32) approximately equal to -3800 pC/N and k(32) > or = 0.90. [011]- poled PZN 6%PT has d(32) approximately equal to -3000 pC/N and comparable k(32) and K(T) values. In comparison with melt-grown PMNPT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (TDP).
RESUMO
A nondestructive quality evaluation and control procedure for large-area, (001)-cut PZN-8%PT wafers is described. The crystals were grown by the flux technique engineered to promote (001) layer growth of the crystals. The wafers were sliced parallel to the (001) layer growth plane. Curie temperature (Tc) variations, measured with matching arrays of dot electrodes (of 5.0 mm in center-to-center spacing), were found to be better than +/- 4.0 degrees C both within wafers and from wafer to wafer. After selective dicing to give final wafers of narrower Tc distributions (e.g., +/- 3.0 degrees C or better), the wafers were coated with complete electrodes and poled at room temperature at 0.7-0.9 kV/mm. Typical overall properties of the poled wafers were: K3T = 5,200 (+/- 10% from wafer to wafer), tan delta < 0.01 (all wafers), and kt = 0.55 (+/- 5%) (all percentage variations are in relative percentages). Then, the distributions of K3S, tan delta, and kt were measured by the array dot electrode technique. The variations in K3S (hence K3T) and kt within individual wafers were found to be within +/- 10% and +/- 5%, respectively. The dielectric loss values, measured at 1 kHz, were consistently low, being < 0.01 throughout the wafers. The kt values determined by the dot electrodes were found to be about 5% smaller than those obtained with the complete electrodes, which can be attributed to an increase in capacitance ratio due to the partial electroding. The k33 values, deduced using the relation K3S approximately (1 - k33(2))K3T, from the mean K3S and overall K3T values, average 0.94 (+/- 2%). The present work shows that the distribution of Tc within wafers can be used as a convenient check for the uniformity in composition and electromechanical properties of PZN-8%PT single crystal wafers. Our results show that, to control deltaK3T and deltakt within individual wafer to < or = 10% and 5%, respectively, the variation in Tc within the wafer should be kept within +/- 3.0 degrees C or better.
