Structural transformations in dinuclear zinc complexes involving Zn-Zn bonds.

Reduction of Zn(2)(mu-eta(2)-Me(2)Si(NDipp)(2))(2) with 4 equiv. of KC(8) resulted in a dramatic structural transformation into [(eta(2)-Me(2)Si(NDipp)(2))ZnZn(eta(2)-Me(2)Si(NDipp)(2))](2-) featuring a Zn-Zn bond instead of [Zn(2)(micro-eta(2)-Me(2)Si(NDipp)(2))(2)](2-); the mechanism of the observed structural transformations arising from the Zn-Zn bond formation involving the intermediate of [Zn(2)(mu-eta(2)-Me(2)Si(NDipp)(2))(2)](-) was elucidated by elaborate computations.

A three-coordinate and quadruply bonded Mo-Mo complex.

Reaction of MoCl3(THF)3 with [Me2Si{NLi(Dipp)}2]2 (Dipp = 2,6-i-PrC6H3) afforded a triply bonded dimolybdenum complex 1,2-Mo2Cl2[Me2Si(NDipp)2]2 1, spanned by two Me2Si[N(Dipp)]2 ligands, thus resulting in a syn conformation. The air- and moisture-sensitive compound 1 was characterized by NMR spectroscopic, elemental, and single-crystal X-ray crystallographic analysis. Reduction of 1 by Na/Hg yielded the quadruply bonded dimeric complex Mo2[Me2Si(NDipp)2]2 2, which was also characterized by the aforementioned analytical methods. The Mo-Mo bond was determined to be 2.1784(12) A, which is considered a long quadruple bond. In addition, density functional theory (DFT) computations on compound 2 provided insight into the intriguing Mo-Mo quadruple bond.

New CVD precursors capable of depositing copper metal under mixed O2/Ar atmosphere.

Volatile low-melting CuII metal complexes Cu[OC(CF3)2CH2C(Me)=NMe]2 (4) and Cu[OC(CF3)2CH2CHMeNHMe]2 (5) were synthesized and characterized by spectroscopic methods. A single-crystal X-ray diffraction study on complex 4 shows the anticipated N2O2 square-planar geometry with the imino alcoholate ligand arranged in the all-trans orientation. In contrast, a highly distorted N2O2 geometry with a dihedral angle of 33 degrees was observed for complex 5, suggesting that the fully saturated amino alcoholate ligand produces a much greater steric congestion around the metal ion. Metal CVD experiments were conducted, showing that both complexes, 4 and 5, are capable of depositing copper metal at temperatures of 275-300 degrees C using an inert argon carrier gas mixed with low concentrations (2-8%) of O2. The best copper thin film showed a purity of approximately 96 at. % and a resistivity of 2.11 microOmega cm versus that of the bulk standard (1.7 microOmega cm), as revealed by XPS and four-point probe analyses, respectively. We speculate that the low concentration of O2 promotes partial ligand oxidation, thus releasing the reduced copper on the substrate and affording the high-purity copper deposit.