New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer.

Being at the origin of an ohmic contact, the MoSe2 interfacial layer at the Mo/Cu(In,Ga)Se2 interface in CIGS (Cu(In,Ga)Se2 and related compounds) based solar cells has allowed for very high light-to-electricity conversion efficiencies up to 22.3%. This article gives new insights into the formation and the structural properties of this interfacial layer. Different selenization-steps of a Mo covered glass substrate prior to the CIGS deposition by co-evaporation led to MoSe2 interfacial layers with varying thickness and orientation, as observed by x-ray diffraction and atomic resolution transmission electron microscopy. A novel model based on the anisotropy of the Se diffusion coefficient in MoSe2 is proposed to explain the results. While the series resistance of finished CIGS solar cells is found to correlate with the MoSe2 orientation, the adhesion forces between the CIGS absorber layer and the Mo substrate stay constant. Their counter-intuitive non-correlation with the configuration of the MoSe2 interfacial layer is discussed and related to work from the literature.

Using radiative transfer equation to model absorption by thin Cu(In,Ga)Se2 solar cells with Lambertian back reflector.

We investigate the optical absorption in a thin Cu(In,Ga)Se(2) solar cell with a Lambertian white paint beneath a transparent back contact. Although this configuration has been proposed more than 30 years ago, it turns out that rigorous simulation of Maxwell's equations demand powerful numerical calculations. This type of approach is time consuming and does not provide a physical insight in the absorption mechanisms. Here, we use the radiative transfer equation to deal with multiple scattering of the diffuse part of the light. The collimated part is treated accounting for wave effects. Our model is in good agreement with optical measurements.

Ab initio study of II-(VI)2 dichalcogenides.

The structural stabilities of the (Zn,Cd)(S,Se,Te)(2) dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe(2) pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications.

Electrodeposition of ZnO nanorod arrays on ZnO substrate with tunable orientation and optical properties.

The electrodeposition of ZnO nanorods on ZnO:Al films with different orientations is reported. The influence of the total charge exchanged during electrodeposition on the nanorod's geometry (length, diameter, aspect ratio and surface density) and the optical transmission properties of the nanorod arrays is studied on a [0001]-oriented ZnO:Al substrate. The nanorods are highly vertically oriented along the c axis, following the lattice matching with the substrate. The growth on a [1010] and [1120] ZnO:Al-oriented substrate with c axis parallel to the substrate leads to a systematic deviation angle of 55 degrees from the perpendicular direction. This finding has been explained by the occurrence of a minority orientation with the [1011] planes parallel to the surface, with a preferential growth on corresponding [0001] termination. Substrate crystalline orientation is thereby found to be a major parameter in finely tuning the orientation of the nanorod array. This new approach allows us to optimize the light scattering properties of the films.

The impact of morphology upon the radiation hardness of ZnO layers.

It is shown that ZnO nanorods and nanodots grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe(23+) irradiation at a dose of 1.5 × 10(14) cm(-2) in ZnO nanorods is nearly identical to that induced by a dose of 6 × 10(12) cm(-2) in bulk layers. The damage introduced by irradiation is shown to change the nature of electronic transitions responsible for luminescence. The change of excitonic luminescence to the luminescence related to the tailing of the density of states caused by potential fluctuations occurs at an irradiation dose around 1 × 10(14) cm(-2) and 5 × 10(12) cm(-2) in nanorods and bulk layers, respectively. More than one order of magnitude enhancement of radiation hardness of ZnO nanorods grown by MOCVD as compared to bulk layers is also confirmed by the analysis of the near-bandgap photoluminescence band broadening and the behavior of resonant Raman scattering lines. The resonant Raman scattering analysis demonstrates that ZnO nanostructures are more radiation-hard as compared to nanostructured GaN layers. High energy heavy ion irradiation followed by thermal annealing is shown to be a way for the improvement of the quality of ZnO nanorods grown by electrodeposition and chemical bath deposition.

In situ ESR and UV/vis spectroelectrochemical study of eosin Y upon reduction with and without Zn(II) ions.

The electroreduction of eosin Y on a platinum electrode in deaerated slightly acidic aqueous 0.1 mol L(-1) potassium chloride medium is followed in situ by electron spin resonance (ESR) spectroscopy and UV/Vis spectroscopy. The electrochemical formation of a semiquinone radical is proved by both the appearance of an absorbing band at 408 nm, and a strong ESR signal observed during a negative-going scan. The system is also studied in the presence of Zn(II) ions due to its importance for understanding the growth mechanism of nanostructured ZnO/Eosin Y hybrid films by electrodeposition; under such conditions the ESR and UV/Vis response of the semiquinone radical is not observed. Zinc (II) ions form a complex with the dye, which is reduced by a fast two-electron process.