RESUMO
The dynamics of ethylene adsorption on the Si(001) surface was investigated by means of molecular beam techniques. A constant decrease of initial sticking probability s(0) was observed with increasing kinetic energy indicating a non-activated adsorption channel. With increasing surface temperature, s(0) decreases as well, pointing towards adsorption via a precursor state. Quantitative evaluation of the temperature dependence of s(0) via the Kisliuk model was possible for surface temperatures above 250 K; below that value, the temperature dependence is dominated by the adsorption dynamics into the precursor state. Maximum surface coverage was found to be reduced with increasing surface temperature, which is discussed on the basis of a long lifetime of the precursor state at low temperatures.
