1.
Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.
Appl Opt
; 56(14): 4197-4200, 2017 May 10.
Artigo
em Inglês
| MEDLINE
| ID: mdl-29047555
RESUMO
The influence of residual carbon impurities incorporated into a heavily Mg-doped GaN layer has been studied systematically according to the relation between the carbon concentration and specific contact resistance. Furthermore, the results of temperature-dependent current-voltage characteristics and the photoluminescence spectra indicate that a proper concentration of residual carbon impurities can improve the performance of Ohmic contact by introducing deep-level defects to enhance the variable-range-hopping conduction.