RESUMO
In this paper, reliability issues of robust HfO(x)-based RRAM are experimentally investigated in terms of cycling ageing, temperature impact and voltage acceleration. All reliability issues can be estimated by the conduction of the high resistance state (HRS). The conduction current of the HRS exponentially increases as the square root of the applied voltage, which is well explained by 'quasi-Poole-Frenkel-type' trap assistant tunneling. Further experiments on HRS conduction at different temperatures show that the depth of the potential well of the trap in HfO(x) film is about 0.31 eV. The degradation induced by the cycling ageing is possibly ascribed to the increase of the amount of oxygen ions in the TiO(x) layer of the TiN/TiO(x)/HfO(x)/TiN device. The retention times with various stress voltages at different temperatures also exhibit an exponential relationship to the square root of the applied voltage, indicating that stress current plays a dominant role for the degradation of the HRS. An oxygen-release model is proposed to explain the relationship of retention time to HRS conduction current.
