Interplay between amplified spontaneous emission, Forster resonant energy transfer, and self-absorption in hybrid poly(9,9-dioctylfluorene)-CdSe/ZnS nanocrystal thin films.

We investigated the excitation density dependence of the photoluminescence spectra of hybrid poly(9,9-dioctylfluorene)-CdSe/ZnS nanocrystals (PF8-NCs) thin films. We demonstrate that this experiment allows the determination of the efficiency of all the CdSe/ZnS NCs excitation processes and that the presence of amplified spontaneous emission (ASE) from the PF8 leads to a strong dependence of the NC excitation processes from the laser excitation density. Below the PF8 ASE threshold only about 6% of the excitons in the NCs are due to pump laser absorption, while about 94% of the NC excitation is due to the interaction with the PF8, and it is due for about 58% to PF8-->NC Forster resonant energy transfer (FRET) and for about 37% to reabsorption by the NCs of the PF8 luminescence. The presence of PF8 ASE significantly modifies this scenario by strongly decreasing the FRET importance and strongly increasing the reabsorption one. The interplay between reduced FRET and increased reabsorption overall decreases the NC excitation due to PF8 indicating that ASE from the donors should be avoided if efficient NCs excitation under strong pumping is wished.

The effects of the focus ion beam milling process on the optical properties of semiconductor nanostructures.

In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.

Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices.

This work investigates the critical issues in the focused ion beam (FIB) nanopatterning of semiconducting devices. Matrixes of holes with diameter of about 150 nm were drilled by FIB on the topmost layers of a quantum dot based device. In order to study the presence of artefacts in the active region of the device, the milling parameters were investigated. A careful analysis of the ion beam effects on the structural and morphological features of the holes, mainly due to the heterogeneous composition of the layers to be milled, demonstrated that important deviations from the expected structures, in terms of size, shape and geometry of the holes, as well as layer amorphization and damage, occur.

The origin of highly efficient selective emission in rare-earth oxides for thermophotovoltaic applications.

Rare-earth oxide materials emit thermal radiation in a narrow spectral region, and can be used for a variety of different high-temperature applications, such as the generation of electricity by thermophotovoltaic conversion of thermal radiation. However, because a detailed understanding of the mechanism of selective emission from rare-earth atoms has so far been missing, attempts to engineer selective emitters have relied mainly on empirical approaches. In this work, we present a new quantum thermodynamic model to describe the mechanisms of thermal pumping and radiative de-excitation in rare-earth oxide materials. By evaluating the effects of the local crystal-field symmetry around a rare-earth ion, this model clearly explains how and why only some of the room-temperature absorption peaks give rise to highly efficient emission bands at high temperature (1,000-1,500 degrees C). High-temperature emissivity measurements along with photoluminescence and cathodoluminescence results confirm the predictions of the theory.

Photoluminescence Efficiency of Substituted Quaterthiophene Crystals.

The photoluminescence (PL) efficiency of substituted alpha-conjugated quaterthiophene crystals shows marked differences depending on crystal packing and molecular geometry. This effect is studied by evaluating the role of the intermolecular interactions and the effects of the single molecule conformation on the intersystem crossing (ISC) rate. The comparison of these calculations with absolute quantum efficiency measurements and with the experimental temperature dependence of the PL decay time, indicates that the differences in PL efficiency are not inherent to crystal packing effects but they are determined by the ISC rate.

Correlation between shape and electronic states in nanostructures

We show how the electronic states of quantum wires and quantum dots can be evaluated exactly starting from the profile of the nanostructure observed by transmission electron microscopy, scanning tunneling microscopy and atomic force microscopy. The calculated quantization energies reproduce the energy position of the luminescence resonances in the optical spectra of different samples, without fitting parameters.