Fatigue Response of MoS2 with Controlled Introduction of Atomic Vacancies.

Fatigue-induced failure resulting from repetitive stress-strain cycles is a critical concern in the development of robust and durable nanoelectromechanical devices founded on 2D semiconductors. Defects, such as vacancies and grain boundaries, inherent in scalable materials can act as stress concentrators and accelerate fatigue fracture. Here, we investigate MoS2 with controlled atomic vacancies, to elucidate its mechanical reliability and fatigue response as a function of atomic defect density. High-quality MoS2 demonstrates an exceptional fatigue response, enduring 109 cycles at 80% of its breaking strength (13.5 GPa), surpassing the fatigue resistance of steel and approaching that of graphene. The introduction of atomic defect densities akin to those generated during scalable synthesis processes (∼1012 cm-2) reduces the fatigue strength to half the breaking strength. Our findings also point toward a sudden defect reconfiguration prior to global failure as the primary fatigue mechanism, offering valuable insights into structure-property relationships.

High-Power-Density Energy-Harvesting Devices Based on the Anomalous Nernst Effect of Co/Pt Magnetic Multilayers.

The anomalous Nernst effect (ANE) is a thermomagnetic phenomenon with potential applications in thermal energy harvesting. While many recent works studied the approaches to increase the ANE coefficient of materials, relatively little effort was devoted to increasing the power supplied by the effect. Here, we demonstrate a nanofabricated device with record power density generated by the ANE. To accomplish this, we fabricate micrometer-sized devices in which the thermal gradient is 3 orders of magnitude higher than conventional macroscopic devices. In addition, we use Co/Pt multilayers, a system characterized by a high ANE thermopower (∼1 µV/K), low electrical resistivity, and perpendicular magnetic anisotropy. These innovations allow us to obtain power densities of around 13 ± 2 W/cm3. We believe that this design may find uses in harvesting wasted energy, e.g., in electronic devices.

Magnetization Signature of Topological Surface States in a Non-Symmorphic Superconductor.

Superconductors with nontrivial band structure topology represent a class of materials with unconventional and potentially useful properties. Recent years have seen much success in creating artificial hybrid structures exhibiting the main characteristics of 2D topological superconductors. Yet, bulk materials known to combine inherent superconductivity with nontrivial topology remain scarce, largely because distinguishing their central characteristic-the topological surface states-has proved challenging due to a dominant contribution from the superconducting bulk. In this work, a highly anomalous behavior of surface superconductivity in topologically nontrivial 3D superconductor In2 Bi, where the surface states result from its nontrivial band structure, itself a consequence of the non-symmorphic crystal symmetry and strong spin-orbit coupling, is reported. In contrast to smoothly decreasing diamagnetic susceptibility above the bulk critical field, Hc2 , as seen in conventional superconductors, a near-perfect, Meissner-like screening of low-frequency magnetic fields well above Hc2 is observed. The enhanced diamagnetism disappears at a new phase transition close to the critical field of surface superconductivity, Hc3 . Using theoretical modeling, the anomalous screening is shown to be consistent with modification of surface superconductivity by the topological surface states. The possibility of detecting signatures of the surface states using macroscopic magnetization provides a new tool for the discovery and identification of topological superconductors.

Confined Crack Propagation in MoS2 Monolayers by Creating Atomic Vacancies.

In two-dimensional crystals, fractures propagate easily, thus restricting their mechanical reliability. This work demonstrates that controlled defect creation constitutes an effective approach to avoid catastrophic failure in MoS2 monolayers. A systematic study of fracture mechanics in MoS2 monolayers as a function of the density of atomic vacancies, created by ion irradiation, is reported. Pristine and irradiated materials were studied by atomic force microscopy, high-resolution scanning transmission electron microscopy, and Raman spectroscopy. By inducing ruptures through nanoindentations, we determine the strength and length of the propagated cracks within MoS2 atom-thick membranes as a function of the density and type of the atomic vacancies. We find that a 0.15% atomic vacancy induces a decrease of 40% in strength with respect to that of pristine samples. In contrast, while tear holes in pristine 2D membranes span several microns, they are restricted to a few nanometers in the presence of atomic and nanometer-sized vacancies, thus increasing the material's fracture toughness.

Improved Graphene Blisters by Ultrahigh Pressure Sealing.

Graphene is a very attractive material for nanomechanical devices and membrane applications. Graphene blisters based on silicon oxide microcavities are a simple but relevant example of nanoactuators. A drawback of this experimental setup is that gas leakage through the graphene-SiO2 interface contributes significantly to the total leak rate. Here, we study the diffusion of air from pressurized graphene drumheads on SiO2 microcavities and propose a straightforward method to improve the already strong adhesion between graphene and the underlying SiO2 substrate, resulting in reduced leak rates. This is carried out by applying controlled and localized ultrahigh pressure (>10 GPa) with an atomic force microscopy diamond tip. With this procedure, we are able to significantly approach the graphene layer to the SiO2 surface around the drumheads, thus enhancing the interaction between them, allowing us to better seal the graphene-SiO2 interface, which is reflected in up to ∼ 4 times lower leakage rates. Our work opens an easy way to improve the performance of graphene as a gas membrane on a technological relevant substrate such as SiO2.

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects.

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries, and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here, we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ∼1000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of eight-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to that of the six-atom rings of graphene and a relatively low barrier of ∼0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

Confining crack propagation in defective graphene.

Crack propagation in graphene is essential to understand mechanical failure in 2D materials. We report a systematic study of crack propagation in graphene as a function of defect content. Nanoindentations and subsequent images of graphene membranes with controlled induced defects show that while tears in pristine graphene span microns length, crack propagation is strongly reduced in the presence of defects. Accordingly, graphene oxide exhibits minor crack propagation. Our work suggests controlled defect creation as an approach to avoid catastrophic failure in graphene.