Effects of Micro-Shot Peening on the Fatigue Strength of Anodized 7075-T6 Alloy.

Micro-shot peening under two Almen intensities was performed to increase the fatigue endurance limit of anodized AA 7075 alloy in T6 condition. Compressive residual stress (CRS) and a nano-grained structure were present in the outermost as-peened layer. Microcracks in the anodized layer obviously abbreviated the fatigue strength/life of the substrate. The endurance limit of the anodized AA 7075 was lowered to less than 200 MPa. By contrast, micro-shot peening increased the endurance limit of the anodized AA 7075 to above that of the substrate (about 300 MPa). Without anodization, the fatigue strength of the high peened (HP) specimen fluctuated; this was the result of high surface roughness of the specimen, as compared to that of the low peened (LP) one. Pickling before anodizing was found to erode the outermost peened layer, which caused a decrease in the positive effect of peening. After anodization, the HP sample had a greater fatigue strength/endurance limit than that of the LP one. The fracture appearance of an anodized fatigued sample showed an observable ring of brittle fracture. Fatigue cracks present in the brittle coating propagated directly into the substrate, significantly damaging the fatigue performance of the anodized sample. The CRS and the nano-grained structure beneath the anodized layer accounted for a noticeable increase in resistance to fatigue failure of the anodized micro-shot peened specimen.

Shortcut to adiabaticity in a silicon polarization splitter rotator using multi-wavelength adiabaticity engineering.

We introduce adiabaticity engineering in coupled waveguide devices to achieve shortcuts to adiabaticity in multi-wavelength systems. By engineering the adiabaticity distribution using a single control parameter, we obtain large operating bandwidth in a compact device. Multi-wavelength adiabaticity engineering is applied to the design of silicon polarization splitter-rotators. The total length of the designed polarization splitter-rotator is 141 µm, and simulations show that the device exhibits extinction ratios above 28 dB and 16 dB for the TE0 and TM0 modes, respectively, with a bandwidth of 300 nm (from 1.4 µm to 1.7 µm). The fabrication tolerance of the designed device is also simulated.