Surface Energy-Assisted Patterning of Vapor Deposited All-Inorganic Perovskite Arrays for Wearable Optoelectronics.

Solution-based methods for fabricating all-inorganic perovskite film arrays often suffer from limited control over nucleation and crystallization, resulting in poor homogeneity and coverage. To improve film quality, advanced vapor deposition techniques are employed for continuous film. Here, the vapor deposition strategy to the all-inorganic perovskite films array, enabling area-selective deposition of perovskite through substrate modulation is expanded. It can yield a high-quality perovskite film array with different pixel shapes, various perovskite compositions, and a high resolution of 423 dpi. The resulting photodetector arrays exhibit remarkable optoelectronic performance with an on/off ratio of 13 887 and responsivity of 47.5 A W-1. The device also displays long-term stability in a damp condition for up to 12 h. Moreover, a pulse monitoring sensor based on the perovskite films array demonstrates stable monitoring for pulse signals after being worn for 12 h and with a low illumination of 0.055 mW cm-2, highlighting the potential application in wearable optoelectronic devices.

A Universal Fabrication Strategy for High-Resolution Perovskite-Based Photodetector Arrays.

Metal halide perovskite photodetector arrays have demonstrated great potential applications in the field of integrated systems, optical communications, and health monitoring. However, the fabrication of large-scale and high-resolution device is still challenging due to their incompatibility with the polar solvents. Here, a universal fabrication strategy that utilizes ultrathin encapsulation-assisted photolithography and etching to create high-resolution photodetectors array with vertical crossbar structure is reported. This approach yields a 48 × 48 photodetector array with a resolution of 317 ppi. The device shows good imaging capability with a high on/off ratio of 3.3 × 105 and long-term working stability over 12 h. Furthermore, this strategy can be applied to five different material systems, and is fully compatible with the existing photolithography and etching techniques, which are expected to have potential applications in the other high-density and solvent-sensitive devices array, including perovskite- or organic semiconductor-based memristor, light emitting diode displays, and transistors.

Localizing strain via micro-cage structure for stretchable pressure sensor arrays with ultralow spatial crosstalk.

Tactile sensors with high spatial resolution are crucial to manufacture large scale flexible electronics, and low crosstalk sensor array combined with advanced data analysis is beneficial to improve detection accuracy. Here, we demonstrated the photo-reticulated strain localization films (prslPDMS) to prepare the ultralow crosstalk sensor array, which form a micro-cage structure to reduce the pixel deformation overflow by 90.3% compared to that of conventional flexible electronics. It is worth noting that prslPDMS acts as an adhesion layer and provide spacer for pressure sensing. Hence, the sensor achieves the sufficient pressure resolution to detect 1 g weight even in bending condition, and it could monitor human pulse under different states or analyze the grasping postures. Experiments show that the sensor array acquires clear pressure imaging and ultralow crosstalk (33.41 dB) without complicated data processing, indicating that it has a broad application prospect in precise tactile detection.

Controlled on-chip fabrication of large-scale perovskite single crystal arrays for high-performance laser and photodetector integration.

Metal halide perovskites possess intriguing optoelectronic properties, however, the lack of precise control of on-chip fabrication of the large-scale perovskite single crystal arrays restricts its application in integrated devices. Here, we report a space confinement and antisolvent-assisted crystallization method for the homogeneous perovskite single crystal arrays spanning 100 square centimeter areas. This method enables precise control over the crystal arrays, including different array shapes and resolutions with less than 10%-pixel position variation, tunable pixel dimensions from 2 to 8 µm as well as the in-plane rotation of each pixel. The crystal pixel could serve as a high-quality whispering gallery mode (WGM) microcavity with a quality factor of 2915 and a threshold of 4.14 µJ cm-2. Through directly on-chip fabrication on the patterned electrodes, a vertical structured photodetector array is demonstrated with stable photoswitching behavior and the capability to image the input patterns, indicating the potential application in the integrated systems of this method.

Large-Scale, Uniform-Patterned CsCu2 I3 Films for Flexible Solar-Blind Photodetectors Array with Ultraweak Light Sensing.

Cesium copper halide perovskite is one of the promising materials for solar-blind light detection. However, most of the cesium copper halide perovskite-based photodetectors (PDs) are focused on ultraviolet A detection and realized on the rigid substrate in the single device configuration. Here, a flexible solar-blind PDs array (10 × 10 pixels) based on the CsCu2 I3 film patterns for ultraweak light sensing and light distribution imaging is reported. Large-scale CsCu2 I3 film arrays are synthesized with various shapes and uniform dimensions through a simple vacuum-heating-assisted solution method. Benefiting from excellent air stability and superior resistance to the photodegrading of the CsCu2 I3 film, the array device exhibits long-term stable photoswitching behavior for 8 h and ultralow light detection capability to resolve the light intensity of 6.1 nW cm-2 with a high responsivity of 62 A W-1 , and the array device can acquire clear images of "G", "X", and "U" showing the input light distribution. Moreover, the flame detection and warning system based on a curved solar-blind PDs array is demonstrated, which can be used for multi-flame monitoring and locating. These results can encourage potential applications of the CsCu2 I3 film-based PDs array in the field of optical communication and environment monitoring.

Flexible Threshold Switching Based on CsCu2I3 with Low Threshold Voltage and High Air Stability.

Halide perovskites featuring remarkable optoelectronic properties hold great potential for threshold switching devices (TSDs) that are of primary importance to next-generation memristors and neuromorphic computers. However, such devices are still in their infancy due to the unsolved challenges of high threshold voltage, poor stability, and lead-containing features. Herein, a unipolar TSD based on an all-inorganic halide perovskite of CsCu2I3 is demonstrated, exhibiting the fascinating attributes of a low threshold voltage of 0.54 V, a high ON/OFF ratio of 104, robust air stability over 70 days, a steep switching slope of 6.2 mV·decade-1, and lead-free composition. Moreover, the threshold voltage can be further reduced to 0.23 V using UV illumination to reduce the barrier of iodide ion migration. The multilevel threshold switching behavior can be realized through the modulation of either the compliance current or the scan rate. The TSD with mechanical compliance and transparency is also demonstrated. This work enriches TSDs with expanded perovskite materials, boosting the related applications of this emerging class of device families.

Distinct green electroluminescence from lead-free CsCuBr2 halide micro-crosses.

Low-dimensional, lead-free, and cuprous-based halide compounds of Cs3Cu2Br5 micro-rods and CsCuBr2 micro-crosses (MCs) were synthesized via a simple solution method. The CsCuBr2 MCs were quite stable in air. Distinct green electroluminescence at 527 nm originating from CsCuBr2 MCs was observed at a low driving voltage of less than 3 V.

Toward near-white-light electroluminescence from n-ZnO nanocrystals/n-Si isotype heterojunctions via an AZO spectral scissor.

A strategy to realize ZnO-based near-white-light electroluminescence (EL) was proposed by utilizing and regulating the intrinsic defect-related emissions of solution-processed ZnO nanocrystals (NCs). Prototype near-white light-emitting diodes (LEDs) based upon this strategy were demonstrated by using n-ZnO NCs/n-Si isotype heterojunctions. The emission color of the n-ZnO NCs/n-Si isotype heterojunction LEDs was tuned toward near white by using an Al-doped ZnO (AZO) spectral "scissor" which can tailor the green light more severely, rather than the blue or red light. Moreover, quantum size effect was clearly observed in both the photoluminescence (PL) and EL spectra via the redshift of the near-band-edge UV emission of the ZnO NCs. The strategy using AZO spectral "scissors" to regulate the VO-related green emission of ZnO may present a promising pathway to realize ZnO-based white-light LEDs.