RESUMO
The effect of holmium (Ho) addition on the glass-forming ability (GFA) and crystallization behaviors of Zr54Cu29Al10Ni7 bulk metallic glass (BMGs) were studied by employing differential scanning calorimetry (DSC), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The characteristic temperatures and activation energies of crystallization were obtained from DSC data. Classical kinetic modes were used to evaluate the crystallization processes of Zr54Cu29Al10Ni7 and Zr48Cu29Ni7Al10Ho6 BMGs. The results showed that Ho addition reduces the activation energy in the original crystallization period of Zr-based BMG and improves the nucleation, which is due to the formation of simpler compounds, such as CuZr2, Cu2Ho, and Al3Zr5.
RESUMO
Nanocrystalline titanium diboride (TiB2) ceramics films were prepared on a high purity graphite substrate via chemical vapor deposition (CVD). The substrate was synthesized by a gas mixture of TiCl4, BCl3, and H2 under 1000 °C and 10 Pa. Properties and microstructures of TiB2 films were also examined. The as-deposited TiB2 films had a nano-sized grain structure and the grain size was around 60 nm, which was determined by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Further research found that a gas flow ratio of TiCl4/BCl3 had an influence on the film properties and microstructures. The analyzed results illustrated that the grain size of the TiB2 film obtained with a TiCl4/BCl3 gas flow ratio of 1, was larger than the grain size of the as-prepared TiB2 film prepared with a stoichiometric TiCl4/BCl3 gas flow ratio of 0.5. In addition, the films deposited faster at excessive TiCl4. However, under the condition of different TiCl4/BCl3 gas flow ratios, all of the as-prepared TiB2 films have a preferential orientation growth in the (100) direction.
