Do Antimonite and Silicon Share the Same Root Uptake Pathway by Lsi1 in Sorghum bicolor L. Moench?

A study was conducted to further develop our understanding of antimony (Sb) uptake in plants. Unlike other metal(loid)s, such as silicon (Si), the mechanisms of Sb uptake are not well understood. However, SbIII is thought to enter the cell via aquaglyceroporins. We investigated if the channel protein Lsi1, which aids in Si uptake, also plays a role in Sb uptake. Seedlings of WT sorghum, with normal silicon accumulation, and its mutant (sblsi1), with low silicon accumulation, were grown in Hoagland solution for 22 days in the growth chamber under controlled conditions. Control, Sb (10 mg Sb L-1), Si (1mM) and Sb + Si (10 mg Sb L-1 + 1 mM Si) were the treatments. After 22 days, root and shoot biomass, the concentration of elements in root and shoot tissues, lipid peroxidation and ascorbate levels, and relative expression of Lsi1 were determined. When mutant plants were exposed to Sb, they showed almost no toxicity symptoms compared to WT plants, indicating that Sb was not toxic to mutant plants. On the other hand, WT plants had decreased root and shoot biomass, increased MDA content and increased Sb uptake compared to mutant plants. In the presence of Sb, we also found that SbLsi1 was downregulated in the roots of WT plants. The results of this experiment support the role of Lsi1 in Sb uptake in sorghum plants.

Effect of silicon on the young maize plants exposed to nickel stress.

Nickel (Ni) is involved in several physiological processes in plants but its excess in environment has many phytotoxic effects. Silicon (Si), an element required for optimal plant performance, has been shown to have beneficial effects for plants coping with various types of stresses. Here we studied the alleviative potential of Si (2.5 mM) added to hydroponically grown maize (Zea mays L.) plants under Ni (100 µM) stress. Ni decreased most of the growth parameters, total chlorophyll (Chl) and leaf relative water content (RWC), and catalase (CAT; EC 1.11.1.6) activity, while leaf water loss (LWL), contents of proline (Pro), hydrogen peroxide (H2O2) and ascorbate (AsA), membrane lipid peroxidation and activities of peroxidase (POX; EC 1.11.1.7) and superoxide dismutase (SOD; EC 1.15.1.1) were increased. Supplementation of Si to Ni-treated plants enhanced the leaf area, Chl content, RWC, CAT and POX (only in younger leaf) activities and decreased LWL, the contents of Pro (in younger leaf), H2O2 (roots) and AsA, lipid peroxidation and POX and SOD activities. We may conclude that Si mitigated the Ni-induced stress in maize by amelioration of the leaf water deficient status (Pro, RWC, LWL), enhancing membrane stability (MDA) and influencing enzymatic (SOD, POX, CAT) and non-enzymatic (Pro, AsA) defence systems. The increased Chl content and leaf area improve overall plant performance.

Multiple effects of silicon on alleviation of nickel toxicity in young maize roots.

Although beneficial metalloid silicon (Si) has been shown to alleviate the toxicity of various heavy metals, there is a lack of knowledge about the role of Si in possible alleviation of phytotoxicity caused by excess of essential nickel (Ni). In the present study we investigated the growth and biomass production, reactive oxygen species (ROS) formation and activities of selected antioxidants, as well as combined effect of Ni and Si on the integrity of cell membranes and electrolyte leakage in young maize roots treated for 24, 48 and 72 h with excess of Ni and/or Si. By histochemical methods we also visualized Ni distribution in root tissues and compared the uptake of Ni and Si with the development of root apoplasmic barriers. Ni enhanced the root lignification and suberization and shifted the development of apoplasmic barriers towards the root tip. Similarly, localization of Ni correlated with lignin and suberin deposition in root endodermis, further supporting the barrier role of this tissue in Ni uptake. Si reversed the negative impact of Ni on root anatomy. Additionally, improved cell membrane integrity, and enhanced ascorbate-based antioxidant system might be the mechanisms how Si partially mitigates the deleterious effects of Ni excess in maize plants.

Influence of silicon on maize roots exposed to antimony - growth and antioxidative response.

Pollution of antimony (Sb) raises a serious environmental problem. Although this non-essential element can be taken up by roots and accumulated in plant tissues in relatively high concentrations, there is still lack of knowledge about the effect of Sb on biochemical and metabolic processes in plants. It was shown that application of silicon (Si) can decrease the toxicity of other heavy metals and toxic elements in various plants. The aim of this study was to assess how Si influences the growth and antioxidative response of young Zea mays L. roots exposed to elevated concentrations of Sb. Antimony reduced the root growth and induced oxidative stress and activated antioxidant defense mechanisms in maize. Silicon addition to Sb treated roots decreased oxidative stress symptoms documented by lower lipid peroxidation, proline accumulation, and decreased activity of antioxidative enzymes (ascorbate peroxidase, EC 1.11.1.11; catalase, EC 1.11.1.6; and guaiacol peroxidase, EC 1.11.1.7). Although neither positive nor negative effect of Si has been observed on root length and biomass, changes in the oxidative response of plants exposed to Sb indicate a possible mitigation role of Si on Sb toxicity in plants.

Silicon modifies root anatomy, and uptake and subcellular distribution of cadmium in young maize plants.

BACKGROUND AND AIMS: Silicon (Si) has been shown to ameliorate the negative influence of cadmium (Cd) on plant growth and development. However, the mechanism of this phenomenon is not fully understood. Here we describe the effect of Si on growth, and uptake and subcellular distribution of Cd in maize plants in relation to the development of root tissues. METHODS: Young maize plants (Zea mays) were cultivated for 10 d hydroponically with 5 or 50 µm Cd and/or 5 mm Si. Growth parameters and the concentrations of Cd and Si were determined in root and shoot by atomic absorption spectrometry or inductively coupled plasma mass spectroscopy. The development of apoplasmic barriers (Casparian bands and suberin lamellae) and vascular tissues in roots were analysed, and the influence of Si on apoplasmic and symplasmic distribution of (109)Cd applied at 34 nm was investigated between root and shoot. KEY RESULTS: Si stimulated the growth of young maize plants exposed to Cd and influenced the development of Casparian bands and suberin lamellae as well as vascular tissues in root. Si did not affect the distribution of apoplasmic and symplasmic Cd in maize roots, but considerably decreased symplasmic and increased apoplasmic concentration of Cd in maize shoots. CONCLUSIONS: Differences in Cd uptake of roots and shoots are probably related to the development of apoplasmic barriers and maturation of vascular tissues in roots. Alleviation of Cd toxicity by Si might be attributed to enhanced binding of Cd to the apoplasmic fraction in maize shoots.

Silicon-induced changes in viscoelastic properties of sorghum root cell walls.

Silicon is deposited in the endodermal tissue in sorghum (Sorghum bicolor L. Moench) roots. Its deposition is thought to protect vascular tissues in the stele against invasion by parasites and drying soil via hardening of endodermal cells. We studied the silicon-induced changes in mechanical properties of cell walls to clarify the role of silicon in sorghum root. Sorghum seedlings were grown in nutrient solution with or without silicon. The mechanical properties of cell walls were measured in three separated root zones: basal, apical and subapical. Silicon treatment decreased cell-wall extensibility in the basal zone of isolated stele tissues covered by endodermal inner tangential walls. The silicon-induced hardening of cell walls was also measured with increases in elastic moduli (E) and viscosity coefficients (eta). These results provided new evidence that silicon deposition might protect the stele as a mechanical barrier by hardening the cell walls of stele and endodermal tissues. In contrast to the basal zone, silicon treatment increased cell-wall extensibility in the apical and subapical zones with concomitant decrease in E and eta. Simultaneously, silicon promoted root elongation. When root elongation is promoted by silicon, one of the causal factors maybe the silicon-enhanced extensibility of cell walls in the growing zone.

The dynamics of silicon deposition in the sorghum root endodermis.

• The dynamics of silica deposition and Si aggregates formation in inner tangential walls of root endodermal cells, which occurs as an additional stage of endodermal development in sorghum (Sorghum bicolor), were studied. • An environmental scanning electron microscope (ESEM) and X-ray microanalyzer (EDAX) were used to study sorghum roots grown hydroponically with Si (+ Si medium) and without Si (- Si medium). • Silica aggregates were absent in roots of plants cultivated in - Si medium. However, their additional formation on fully mature and thickened endodermal cell walls took place when plants grown in - Si medium were transferred to + Si medium. The beginning of Si aggregates formation was observed and Si deposition detected 2 h after transfer to + Si medium. • By dipping the apical root half in + Si medium, the silica aggregates were formed in the endodermis at the basal part of the root. This supports the hypothesis of outward Si transport from the xylem to the endodermis rather than radial inward Si movement and its deposition at the point of the apoplastic barrier represented by the endodermis.

Silicification in sorghum (Sorghum bicolor) cultivars with different drought tolerance.

Sorghum belongs to a group of economically important, silicon accumulating plants. X-ray microanalysis coupled with environmental scanning electron microscopy (ESEM) of fresh root endodermal and leaf epidermal samples confirms histological and cultivar specificity of silicification. In sorghum roots, silicon is accumulated mostly in endodermal cells. Specialized silica aggregates are formed predominantly in a single row in the form of wall outgrowths on the inner tangential endodermal walls. The density of silica aggregates per square mm of inner tangential endodermal cell wall is around 2700 and there is no significant difference in the cultivars with different content of silicon in roots. In the leaf epidermis, silicon deposits were present in the outer walls of all cells, with the highest concentration in specialized idioblasts termed 'silica cells'. These cells are dumb-bell shaped in sorghum. In both the root endodermis and leaf epidermis, silicification was higher in a drought tolerant cultivar Gadambalia compared with drought sensitive cultivar Tabat. Silicon content per dry mass was higher in leaves than in roots in both cultivars. The values for cv. Gadambalia in roots and leaves are 3.5 and 4.1% Si, respectively, and for cv. Tabat 2.2 and 3.3%. However, based on X-ray microanalysis the amount of Si deposited in endodermal cell walls in drought tolerant cultivar (unlike the drought susceptible cultivar) is higher than that deposited in the leaf epidermis. The high root endodermal silicification might be related to a higher drought resistance.