RESUMO
The effect of radiation defects formed during gamma irradiation of single-crystal silicon on the internal friction in dislocations was studied. It was found that in dislocation silicon, after irradiation with gamma rays of a source of ionizing radiation 60Co, at first the internal friction (Q-1) increases to a maximum value and then Q-1 gradually decreases to the initial values. It is shown that, as a result of gamma irradiation of silicon, the resulting change in Q-1 is associated with the process of relaxation of vacancies with the formation of vacancy defect complexes near dislocation lines. The data of the acoustic emission method (obtained AE spectra) confirm that AE signals in gamma-irradiated silicon arise due to moving dislocations, and the intensity of AE signals initially increases during the first 1.5-2â¯h, which is also observed with an increase in internal friction depending on Q-1(t), and then the AE signals decrease in the form of pulses of discrete AE signals.
