Quantum Monte Carlo Study of Positron Lifetimes in Solids.

We present an analysis of positron lifetimes in solids with unprecedented depth. Instead of modeling correlation effects with density functionals, we study positron-electron wave functions with long-range correlations included. This gives new insight in understanding positron annihilation in metals, insulators, and semiconductors. By using a new quantum Monte Carlo approach for computation of positron lifetimes, an improved accuracy compared to previous computations is obtained for a representative set of materials when compared with experiment. Thus, we present a method without free parameters as a useful alternative to the already existing methods for modeling positrons in solids.

Evaluation of the concentration of point defects in GaN.

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm-3. At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.

Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb.

Positron annihilation spectroscopy was performed to study defects in Ge doped with As, P and Sb. In each case, the samples had approximately the same dopant concentration ∼10(19) cm(-3). Results from the Doppler broadening and positron lifetime spectroscopies were compared to electronic structure calculations. The positron lifetime results show that the open volume related to the defect centers is not larger than a monovacancy. The results suggest that in the As doped sample the dominant trap at room temperature is a complex consisting of a vacancy and at least three dopant atoms. In the case of P doped Ge the results indicate that two defect complexes compete in positron trapping. Complexes with a higher number of P atoms around the vacancy seem to dominate at room temperature whereas at low temperature positron trapping at centers with fewer P atoms around the vacancy becomes more significant. The complexes with fewer P atoms are more negatively charged. In Sb doped Ge the results suggest that several types of traps are simultaneously competing in positron trapping at all measurement temperatures.

Effects of fluoxetine treatment on striatal dopamine transporter binding and cerebrospinal fluid insulin-like growth factor-1 in children with autism.

A positive effect of fluoxetine has been shown in some children with autism. The present study was undertaken to correlate striatal dopamine transporter (DAT) binding and cerebrospinal fluid insulin-like growth factor-1 (CSF-IGF-1) with clinical response in autistic children (n=13, age 5-16 years) after a 6-month fluoxetine treatment. Good clinical responders (n=6) had a decrease (p=0.031) in DAT binding as assessed using single-photon emission computed tomography with [123I]-nor-ß-CIT, whereas poor responders had a trend to an increase. An increase in CSF-IGF-1 (p=0.003) was detected after the treatment period, but no correlation between the clinical response and CSF-IGF-1 was found. In conclusion, fluoxetine decreases DAT binding indicating alleviation of the hyperdopaminergic state and increases CSF-IGF-1 concentration, which may also have a neuroprotective effect against dopamine-induced neurotoxicity in autistic children.

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy.

Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1-2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400-500 K convert the defects to larger complexes where the open volume is neighbored by 2-3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.