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1.
Reply to "Comment on 'Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells"'
Huang D; Manasreh MO; Gumbs G.
Phys Rev B Condens Matter ; 54(15): 10980-10981, 1996 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9984898
2.
Intersubband transitions in strained In0.07Ga0.93As/Al0.40Ga0.60As multiple quantum wells and their application to a two-colors photodetector.
Huang D; Manasreh MO.
Phys Rev B Condens Matter ; 54(8): 5620-5628, 1996 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-9986525
3.
Effects of the screened exchange interaction on the tunneling and Landau gaps in double quantum wells.
Huang D; Manasreh MO.
Phys Rev B Condens Matter ; 54(3): 2044-2048, 1996 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-9986056
4.
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition.
Manasreh MO.
Phys Rev B Condens Matter ; 53(24): 16425-16428, 1996 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9983483
5.
Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells.
Huang D; Gumbs G; Manasreh MO.
Phys Rev B Condens Matter ; 52(19): 14126-14130, 1995 Nov 15.
Artigo em Inglês | MEDLINE | ID: mdl-9980632
6.
Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well.
Szmulowicz F; Manasreh MO; Stutz CE; Vaughan T.
Phys Rev B Condens Matter ; 50(16): 11618-11623, 1994 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9975294
7.
Phonon coupling associated with free-to-bound and bound-to-bound transitions in GaAs layers grown by molecular-beam epitaxy.
Reynolds DC; Talwar DN; Manasreh MO; Stutz CE.
Phys Rev B Condens Matter ; 47(20): 13304-13308, 1993 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-10005635
8.
Intersubband optical absorption in heavily doped n-type GaAs/Al0.3Ga0.7As multiple quantum wells.
Jogai B; Manasreh MO; Stutz CE; Whitney RL; Kinell DK.
Phys Rev B Condens Matter ; 46(11): 7208-7211, 1992 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-10002434
9.
Indirect photoreflectance from high-electron-mobility transistor structures.
Sydor M; Engholm JR; Manasreh MO; Evans KR; Stutz CE; Mitchel WC.
Phys Rev B Condens Matter ; 45(23): 13796-13798, 1992 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-10001488
10.
Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy.
von Bardeleben HJ; Manasreh MO; Look DC; Evans KR; Stutz CE.
Phys Rev B Condens Matter ; 45(7): 3372-3375, 1992 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-10001911
11.
Anomalous behavior of cyclotron resonance in GaAs/Al0.28Ga0.72As high-electron-mobility transistor structures.
Manasreh MO; Fischer DW; Evans KR; Stutz CE.
Phys Rev B Condens Matter ; 43(12): 9772-9776, 1991 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-9996678
12.
Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells.
Manasreh MO; Szmulowicz F; Vaughan T; Evans KR; Stutz CE; Fischer DW.
Phys Rev B Condens Matter ; 43(12): 9996-9999, 1991 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-9996714
13.
Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.
Look DC; Walters DC; Manasreh MO; Sizelove JR; Stutz CE; Evans KR.
Phys Rev B Condens Matter ; 42(6): 3578-3581, 1990 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-9995870
14.
Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 degreesC: Observation of an EL2-like defect.
Manasreh MO; Look DC; Evans KR; Stutz CE.
Phys Rev B Condens Matter ; 41(14): 10272-10275, 1990 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9993433
15.
Quenching and recovery characteristics of the EL2 defect in GaAs under monochromatic-light illumination.
Manasreh MO; Fischer DW.
Phys Rev B Condens Matter ; 40(17): 11756-11763, 1989 Dec 15.
Artigo em Inglês | MEDLINE | ID: mdl-9991780
16.
Noncreation of the EL2 defect in neutron-irradiated GaAs.
Manasreh MO; Fischer DW.
Phys Rev B Condens Matter ; 40(8): 5814-5816, 1989 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9992628
17.
Photoquenching and photoinduced-recovery properties of the EL2 defect in GaAs: Evidence against the identification of EL2 with the isolated AsGa defect.
Manasreh MO; Fischer DW.
Phys Rev B Condens Matter ; 39(17): 13001-13004, 1989 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9948194
18.
Infrared absorption properties of the EL2 and the isolated AsGa defects in neutron-transmutation-doped GaAs: Generation of an EL2-like defect.
Manasreh MO; Fischer DW.
Phys Rev B Condens Matter ; 39(5): 3239-3249, 1989 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-9948624
19.
Electron-irradiation effects on the infrared absorption properties of the EL2 defect in GaAs.
Manasreh MO; Fischer DW.
Phys Rev B Condens Matter ; 39(6): 3871-3874, 1989 Feb 15.
Artigo em Inglês | MEDLINE | ID: mdl-9948711
20.
Ultrasonic attenuation peaks near the diffuse solid-electrolyte transition temperature in PbF2 and BaF2.
Manasreh MO; Pederson DO.
Phys Rev B Condens Matter ; 38(9): 6270-6273, 1988 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9947089
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