RESUMO
Carbon nanotube thin film transistors (CNT-TFTs) are regarded as promising technology for active matrix pixel driving circuits of future flat panel displays (FPD). For FPD application, unipolar thin film transistors (TFTs) with high mobility (µ), high on-state current (ION), low off-current (IOFF) at high source/drain bias and small hysteresis are required simultaneously. Though excellent values of those performance metrics have been realized individually in different reports, the overall performance of previously reported CNT-TFTs has not met the above requirements. In this paper, we found that yttrium oxide (Y2O3) capping is helpful in improving both ION and µ of CNT-TFTs. Combining Y2O3 capping and Al2O3 passivation, unipolar CNT-TFTs with high ION/IOFF (>107) and low IOFF (â¼pA) at -10.1 V source/drain bias, and relatively small hysteresis in the range of -30 V to +30 V gate voltage were achieved, which are capable of active matrix display driving.
RESUMO
For the first time, transparent La0.2Y1.8O3 nanostructured polycrystalline scintillators were fabricated by sintering nanoparticle powders at high temperatures and their scintillation properties are reported. La0.2Y1.8O3 is a host material that has never been investigated as scintillators for radiation detection. Our observations found that La0.2Y1.8O3 has an intense scintillation luminescence, a detection efficiency higher than that of YAG:Ce and a comparable energy resolution to NaI and CsI scintillators. In addition, La0.2Y1.8O3 is stable and has luminescence decay lifetime in the picosecond range which is favorable for radiation detection. The luminescence of La0.2Y1.8O3 has a large Stokes-shift and a large emission bandwidth, and the luminescence is highly temperature dependent. Different from most doped scintillators, the luminescence of La0.2Y1.8O3 is most likely from the self-trapped excitons. The discovery of La0.2Y1.8O3 scintillators opens a new door for the research of new materials for radiation detection.
RESUMO
The exciton localization in wurtzite AlxGa1-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa1-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization.
