Probing the role of thermal vibrational disorder in the SPT of VO[Formula: see text] by Raman spectroscopy.

Phase competition in transition metal oxides has attracted remarkable interest for fundamental aspects and technological applications. Here, we report a concurrent study of the phase transitions in undoped and Cr-doped VO[Formula: see text] thin films. The structural, morphological and electrical properties of our films are examined and the microstructural effect on the metal-insulator transition (MIT) are highlighted. We further present a distinctive approach for analyzing the Raman data of undoped and Cr-doped VO[Formula: see text] thin films as a function of temperature, which are quantitatively correlated to the electrical measurements of VO[Formula: see text] films to give an insight into the coupling between the structural phase transition (SPT) and the MIT. These data are also combined with reported EXAFS measurements and a connection between the Raman intensities and the mean Debye-Waller factors [Formula: see text] is established. We found that the temperature dependence of the [Formula: see text] as calculated from the Raman intensity retraces the temperature profile of the [Formula: see text] as obtained from the EXAFS data analysis. Our findings provide an evidence on the critical role of the thermal vibrational disorder in the VO[Formula: see text] phase transitions. Our study demonstrates that correlating Raman data with EXAFS analysis, the lattice and electronic structural dynamics can be probed.

Enhanced Long-term and Thermal Stability of Polymer Solar Cells in Air at High Humidity with the Formation of Unusual Quantum Dot Networks.

Due to the practical applications of polymer solar cells (PSCs), their stability recently has received increasing attention. Herein, a new strategy was developed to largely enhance the long-term and thermal stability of PSCs in air with a relatively high humidity of 50-60% without any encapsulation. In this strategy, semiconductor PbS/CdS core/shell quantum dots (QDs) were incorporated into the photoactive blend of poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM). By replacing the initial ligands of oleic acid with halide ligands on the surface of PbS/CdS QDs via solution-phase ligand exchange, we were able to form unusual, continuous QD networks in the film of P3HT:PCBM, which effectively stabilized the photoactive layer. Air-processed PSCs based on the stabilized P3HT:PCBM film showed excellent long-term stability under high humidity, providing over 3% of power conversion efficiency (PCE) simultaneously. Around 91% of pristine PCE was retained after 30 days storage in high-humidity air without encapsulation. This constitutes a remarkable improvement compared to ∼53% retained PCE for the QD-free devices, which can be ascribed to the efficient suppression of both PCBM aggregation and oxidation of the thiophene ring in P3HT, thanks to the formation of robust QD networks. Furthermore, the presence of QD networks was able to enhance the stability of the P3HT:PCBM film against thermal stress/oxidation under high-humidity environment (50-60%) as well. The device kept 60% of pristine PCE after thermal treatment for 12 h at 85 °C in air, which is more than twice higher than that for the QD-free device. To the best of our knowledge, the work represents the first unambiguous demonstration of the formation of QD networks in the photoactive layer and of their important contribution to the stability of PSCs. This strategy is highly promising for other fullerene-based PSCs and opens a new avenue toward achieving PSCs with high PCE and excellent stability.

Optical properties of epitaxial CaxBa1-xNb2O6 thin film based rib-waveguide structure on (001) MgO for electro-optic applications.

In this work, optical properties of epitaxial CaxBa1-xNb2O6, CBN (x = 0.28) thin film based waveguides are studied at 1550 nm optical communications wavelength. CBN thin films are deposited epitaxially on MgO substrates using Pulsed Laser Deposition and characterized by prism coupling to extract the refractive index and propagation loss. It is shown that the 2 µm-thick epitaxial CBN thin films have a refractive index close to the bulk form and the CBN planar waveguides have a propagation loss of 4.3 ± 0.5 dB/cm. 1 cm-long rib waveguide structures were fabricated using a high density plasma etching. Their propagation losses were measured by the cutback method at 8.4 ± 0.6 dB/cm.

Fabrication of buckling free ultrathin silicon membranes by direct bonding with thermal difference.

An innovative method to fabricate large area (up to several squared millimeters) ultrathin (100 nm) monocrystalline silicon (Si) membranes is described. This process is based on the direct bonding of a silicon-on-insulator wafer with a preperforated silicon wafer. The stress generated by the thermal difference applied during the bonding process is exploited to produce buckling free silicon nanomembranes of large areas. The thermal differences required to achieve these membranes (≥1 mm(2)) are estimated by analytical calculations. An experimental study of the stress achievable by direct bonding through two specific surface preparations (hydrophobic or hydrophilic) is reported. Buckling free silicon nanomembranes secured on a 2 × 2 cm(2) frame with lateral dimensions up to 5 × 5 mm(2) are successfully fabricated using the optimized direct bonding process. The stress estimated by theoretical analysis is confirmed by Raman measurements, while the flatness of the nanomembranes is demonstrated by optical interferometry. The successful fabrications of high resolution (50 nm half pitch) tungsten gratings on the silicon nanomembranes and of focused ion beam milling nanostructures show the promising potential of the Si membranes for X-ray optics and for the emerging nanosensor market.

Dependence of gold nanoparticle production on pulse duration by laser ablation in liquid media.

The dependence on laser fluence and laser pulse duration of size, size distribution and concentration of gold nanoparticles synthesized by laser ablation in liquid media was investigated. It was demonstrated that increasing laser energy from 1 to 5 mJ/pulse enhances the ablation rate by a factor of 100. The behavior of the ablation rate, hence of the nanoparticle concentration, as a function of pulse duration (varied from 40 fs to 200 ps) was found to strongly differ from that in air, which can be explained by photoionization and important losses of laser energy in the femtosecond regime. The optimal pulse duration for maximum ablation rate in liquid media was found to be equal to 2 ps.

Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches.

Negative capacitance (NC) in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz-10 MHz. The capacitance changed from positive to negative values as the W-doped VO2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance-voltage hysteresis was observed as the applied voltage was cycled from -35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.

Investigation of the state of local thermodynamic equilibrium of a laser-produced aluminum plasma.

In this work, the assumption of local thermodynamic equilibrium (LTE) for a laser-induced plasma in ambient air is examined experimentally using two different laser systems, namely an infrared short-pulse Ti : Sapphire laser and an ultraviolet long-pulse XeCl excimer laser. The LTE assumption is investigated by examining the plasma produced at a laser fluence of 10 J/cm(2) from aluminum targets containing iron and magnesium impurities. The excitation temperature is deduced from Boltzmann diagrams built from a large number of spatially integrated neutral iron lines distributed from 3.21 to 6.56 eV. It is shown that at any time after the end of the laser pulse, the neutral excited states are in excellent Boltzmann equilibrium. Detailed investigation of Boltzmann equilibrium further validates previous temperature measurements using less accurate diagrams. However, observations of ion lines provide some evidence that the ionized species do not obey Saha equilibrium, thereby indicating departure from LTE. This could be explained by the fact that the plasma cannot be considered as stationary for these species.

Laser-ablated volume and depth as a function of pulse duration in aluminum targets.

The ablated depth and volume per laser pulse from an aluminum target were measured for pulse durations that ranged from 80 fs to 270 ps at an average fluence of approximately 100 J/cm2 and a wavelength of 0.8 microm. The ablated volume showed a flat maximum for subpicosecond pulses and a minimum for approximately 6 ps. The crater diameters were rather constant up to pulse durations of approximately 6 ps and increased for larger pulse durations. As a result, the ablated depth also showed a plateau for subpicosecond pulses but decreased monotonically with pulse duration. A physical interpretation of these results and their consequences for laser applications are discussed.