Topological electronic structure and Rashba effect in Bi thin layers: theoretical predictions and experiments.

The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.

Distinctive Picosecond Spin Polarization Dynamics in Bulk Half Metals.

Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi-Dirac distributions for the minority, majority conduction, and majority valence electrons, respectively. Remarkably, these distributions have the same temperature but different chemical potentials. This unusual thermodynamic state is causing a persistent nonequilibrium spin polarization only well above the Fermi energy. Femtosecond spin dynamics experiments performed on Fe_{3}O_{4} by time- and spin-resolved photoelectron spectroscopy support our model. Furthermore, the spin polarization response proves to be very robust and it can be adopted to selectively test the bulk HM character in a wide range of compounds.

Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100).

Densely packed epitaxial Mn-doped Si(0.3)Ge(0.7) nanodots self-assembled on Si(100) have been obtained. Their structural properties were studied using reflection high-energy electron diffraction, energy dispersive x-ray diffraction, atomic force microscopy, extended x-ray absorption fine structure measurements and high-resolution transmission electron microscopy. Mn(5)Ge(1)Si(2) crystallites embedded in Si(0.3)Ge(0.7) were found. They exhibit a ferromagnetic behaviour with a Curie temperature of about 225 K.

Probing the transition in bulk Ce under pressure: a direct investigation by resonant inelastic X-ray scattering.

We report on the most complete investigation to date of the -electron properties at the transition in elemental Ce by resonant inelastic x-ray scattering (RIXS). The Ce 2p3d-RIXS spectra were measured directly in the bulk material as a function of pressure through the transition. The spectra were simulated within the Anderson impurity model. The occupation number n(f) and f double occupancy were derived from the calculations in both gamma and alpha phases in the ground state. We find that the electronic structure changes result mainly from band formation of 4f electrons which concurs with reduced electron correlation and increased Kondo screening at high pressure.

f-State occupancy at the gamma-alpha phase transition of Ce-Th and Ce-Sc alloys.

Resonant inelastic x-ray scattering spectra were measured for a series of Ce solid solutions (Ce-Th and Ce-Sc) across the gamma-alpha phase transition. They reveal a well-defined feature associated with the 4f2 configuration when the incident energy is tuned to the Ce L3 preedge region. This component is normally hidden in x-ray absorption spectra because of lifetime broadening. The f1/f2 ratio estimated by resonant inelastic x-ray scattering presents a sharp drop across the gamma-alpha transition and hysteresis as a function of temperature that closely resemble the magnetization loop. These measurements confirm recent dynamical mean-field theory calculations that unexpectedly predict significant double occupancy of f orbitals in the ground state.