Highly mobile oxygen hole-type charge carriers in fused silica.

Some peculiar positive charge carriers are thermally generated in fused silica above 500 degrees C. These charge carriers appear to be positive holes, chemically O- states, probably arising from dissociation of peroxy defects. The charge carriers give rise to a pronounced positive surface charge which disappears upon cooling but can be quenched by rapid quenching from approximately 800 degrees C. Reheating to approximately 200 degrees C remobilizes these charge carriers and causes them to anneal below 400 degrees C. The generation of positive holes charge carriers may be important to understand failure mechanisms of SiO2 insulators.