Robust parallel laser driving of quantum dots for multiplexing of quantum light sources.

Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms have large dipole moments and a quantum confined energy level structure, enabling the realization of single photon sources with high repetition rates and high single photon purity. Quantum dots may also be triggered using a laser pulse for on-demand operation. The naturally-occurring size variations in ensembles of quantum dots offers the potential to increase the bandwidth of quantum communication systems through wavelength-division multiplexing, but conventional laser triggering schemes based on Rabi rotations are ineffective when applied to inequivalent emitters. Here we report the demonstration of the simultaneous triggering of >10 quantum dots using adiabatic rapid passage. We show that high-fidelity quantum state inversion is possible in a system of quantum dots with a 15 meV range of optical transition energies using a single broadband, chirped laser pulse, laying the foundation for high-bandwidth, multiplexed quantum networks.

A GaAs phononic crystal with shallow noncylindrical holes.

A square lattice of shallow, noncylindrical holes in GaAs is shown to act as a phononic crystal (PnC) reflector. The holes are produced by wet-etching a GaAs substrate using a citric acid:H2O2 etching procedure and a photolithographed array pattern. Although nonuniform and asymmetric etch rates limit the depth and shape of the phononic crystal holes, the matrix acts as a PnC, as demonstrated by insertion loss measurements together with interferometric imaging of surface acoustic waves propagating on the GaAs surface. The measured vertical displacement induced by surface phonons compares favorably with finite-difference time-domain simulations of a PnC with rounded-square holes.

Measurement of coherence decay in GaMnAs using femtosecond four-wave mixing.

The application of femtosecond four-wave mixing to the study of fundamental properties of diluted magnetic semiconductors ((s,p)-d hybridization, spin-flip scattering) is described, using experiments on GaMnAs as a prototype III-Mn-V system.  Spectrally-resolved and time-resolved experimental configurations are described, including the use of zero-background autocorrelation techniques for pulse optimization.  The etching process used to prepare GaMnAs samples for four-wave mixing experiments is also highlighted.  The high temporal resolution of this technique, afforded by the use of short (20 fsec) optical pulses, permits the rapid spin-flip scattering process in this system to be studied directly in the time domain, providing new insight into the strong exchange coupling responsible for carrier-mediated ferromagnetism.  We also show that spectral resolution of the four-wave mixing signal allows one to extract clear signatures of (s,p)-d hybridization in this system, unlike linear spectroscopy techniques.   This increased sensitivity is due to the nonlinearity of the technique, which suppresses defect-related contributions to the optical response. This method may be used to measure the time scale for coherence decay (tied to the fastest scattering processes) in a wide variety of semiconductor systems of interest for next generation electronics and optoelectronics.