Assessing the Drawbacks and Benefits of Ion Migration in Lead Halide Perovskites.

Since the inception of the unprecedented rise of halide perovskites for photovoltaic research, ion migration has shadowed this material class with undesirable hysteresis and degradation effects, limiting its practical implementations. Unfortunately, the localized doping and electrochemical reactions triggered by ion migration cause many more undesirable effects that are often unreported or misinterpreted because they deviate from classical semiconductor behavior. In this Perspective, we provide a concise overview of such effects in halide perovskites, such as operational instability in photovoltaics, polarization-induced abnormal external quantum efficiency in light-emitting diodes, and energy channel shift and anomalous sensitivities in hard radiation detection. Finally, we highlight a unique use case of exploiting ion migration as a boon to design emerging memory technologies such as memristors for information storage and computing.

Single-Crystal Perovskite Solar Cells Exhibit Close to Half A Millimeter Electron-Diffusion Length.

Single-crystal halide perovskites exhibit photogenerated-carriers of high mobility and long lifetime, making them excellent candidates for applications demanding thick semiconductors, such as ionizing radiation detectors, nuclear batteries, and concentrated photovoltaics. However, charge collection depreciates with increasing thickness; therefore, tens to hundreds of volts of external bias is required to extract charges from a thick perovskite layer, leading to a considerable amount of dark current and fast degradation of perovskite absorbers. However, extending the carrier-diffusion length can mitigate many of the anticipated issues preventing the practical utilization of perovskites in the abovementioned applications. Here, single-crystal perovskite solar cells that are up to 400 times thicker than state-of-the-art perovskite polycrystalline films are fabricated, yet retain high charge-collection efficiency in the absence of an external bias. Cells with thicknesses of 110, 214, and 290 µm display power conversion efficiencies (PCEs) of 20.0, 18.4, and 14.7%, respectively. The remarkable persistence of high PCEs, despite the increase in thickness, is a result of a long electron-diffusion length in those cells, which was estimated, from the thickness-dependent short-circuit current, to be ≈0.45 mm under 1 sun illumination. These results pave the way for adapting perovskite devices to optoelectronic applications in which a thick active layer is essential.

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr3 Single Crystals.

CsPbBr3 single crystals have potential for application in ionizing-radiation detection devices due to their optimal optoelectronic properties. Yet, their mixed ionic-electronic conductivity produces instability and hysteretic artifacts hindering the long-term device operation. Herein, we report an electrical characterization of CsPbBr3 single crystals operating up to the time scale of hours. Our fast time-of-flight measurements reveal bulk mobilities of 13-26 cm2 V-1 s-1 with a negative voltage bias dependency. By means of a guard ring (GR) configuration, we separate bulk and surface mobilities showing significant qualitative and quantitative transport differences. Our experiments of current transients and impedance spectroscopy indicate the formation of several regimes of space-charge-limited current (SCLC) associated with mechanisms similar to the Poole-Frenkel ionized-trap-assisted transport. We show that the ionic-SCLC seems to be an operational mode in this lead halide perovskite, despite the fact that experiments can be designed where the contribution of mobile ions to transport is negligible.

Discovery of temperature-induced stability reversal in perovskites using high-throughput robotic learning.

Stability of perovskite-based photovoltaics remains a topic requiring further attention. Cation engineering influences perovskite stability, with the present-day understanding of the impact of cations based on accelerated ageing tests at higher-than-operating temperatures (e.g. 140°C). By coupling high-throughput experimentation with machine learning, we discover a weak correlation between high/low-temperature stability with a stability-reversal behavior. At high ageing temperatures, increasing organic cation (e.g. methylammonium) or decreasing inorganic cation (e.g. cesium) in multi-cation perovskites has detrimental impact on photo/thermal-stability; but below 100°C, the impact is reversed. The underlying mechanism is revealed by calculating the kinetic activation energy in perovskite decomposition. We further identify that incorporating at least 10 mol.% MA and up to 5 mol.% Cs/Rb to maximize the device stability at device-operating temperature (<100°C). We close by demonstrating the methylammonium-containing perovskite solar cells showing negligible efficiency loss compared to its initial efficiency after 1800 hours of working under illumination at 30°C.

Strain-activated light-induced halide segregation in mixed-halide perovskite solids.

Light-induced halide segregation limits the bandgap tunability of mixed-halide perovskites for tandem photovoltaics. Here we report that light-induced halide segregation is strain-activated in MAPb(I1-xBrx)3 with Br concentration below approximately 50%, while it is intrinsic for Br concentration over approximately 50%. Free-standing single crystals of CH3NH3Pb(I0.65Br0.35)3 (35%Br) do not show halide segregation until uniaxial pressure is applied. Besides, 35%Br single crystals grown on lattice-mismatched substrates (e.g. single-crystal CaF2) show inhomogeneous segregation due to heterogenous strain distribution. Through scanning probe microscopy, the above findings are successfully translated to polycrystalline thin films. For 35%Br thin films, halide segregation selectively occurs at grain boundaries due to localized strain at the boundaries; yet for 65%Br films, halide segregation occurs in the whole layer. We close by demonstrating that only the strain-activated halide segregation (35%Br/45%Br thin films) could be suppressed if the strain is properly released via additives (e.g. KI) or ideal substrates (e.g. SiO2).

Looking beyond the Surface: The Band Gap of Bulk Methylammonium Lead Iodide.

Despite the intense research on photovoltaic lead halide perovskites, reported optical properties as basic as the absorption onset and the optical band gap vary significantly. To unambiguously answer the question whether the discrepancies are a result of differences between bulk and "near-surface" material, we perform two nonlinear spectroscopies with drastically different information depths on single crystals of the prototypical (CH3NH3)PbI3 methylammonium lead iodide. Two-photon absorption, detected via the resulting generation of carriers and photocurrents (2PI-PC), probes the interband transitions with an information depth in the millimeter range relevant for bulk (single-crystal) material. In contrast, the transient magneto-optical Kerr effect (trMOKE) measured in a reflection geometry determines the excitonic transition energies in the region near (hundreds of nm) the surface which also determine the optical properties in typical thin films. To identify differences between structural phases, we sweep the sample temperature across the orthorhombic-tetragonal phase transition temperature. In the application-relevant room-temperature tetragonal phase (at 170 K), we find a bulk band gap of 1.55 ± 0.01 eV, whereas in the near-surface region excitonic transitions occur at 1.59 ± 0.01 eV. The latter value is consistent with previous reflectance measurements by other groups and considerably higher than the bulk band gap. The small band gap of the bulk material explains the extended infrared absorption of crystalline perovskite solar cells, the low-energy bands which carry optically driven spin-polarized currents, and the narrow bandwidth of crystalline perovskite photodetectors making use of the spectral filtering at the surface.

Electrical-Field-Driven Tunable Spectral Responses in a Broadband-Absorbing Perovskite Photodiode.

Controllably manipulating the spectral response of broadband-absorbing semiconductors is crucial for developing wavelength-selective optoelectronic devices. In this article, we report for the first time, the bias-dependent spectral responses for a metal-halide perovskite photodiode. Tunable external quantum efficiencies in the short- and long-wavelength regimes, and the full spectral range (ca. 300-800 nm) are observed when the device is operated under short-circuit, and forward and reverse bias conditions, respectively. This observation is understood by the interplay of wavelength-dependent penetration depth and barrier formation within the photodiode device stack. The general applicability of this concept is confirmed by a systematic study on a series of mixed-halide perovskite devices. These results suggest that the proposed concept allows as a promising platform and should inspire further exploration of multispectral responsive optoelectronic devices.

Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect.

Lead halide perovskites are used in thin-film solar cells, which owe their high efficiency to the long lifetimes of photocarriers. Various calculations find that a dynamical Rashba effect could significantly contribute to these long lifetimes. This effect is predicted to cause a spin splitting of the electronic bands of inversion-symmetric crystalline materials at finite temperatures, resulting in a slightly indirect band gap. Direct experimental evidence of the existence or the strength of the spin splitting is lacking. Here, we resonantly excite photocurrents in single crystalline ([Formula: see text])[Formula: see text] with circularly polarized light to clarify the existence of spin splittings in the band structure. We observe a circular photogalvanic effect, i.e., the photocurrent depends on the light helicity, in both orthorhombic and tetragonal ([Formula: see text])[Formula: see text] At room temperature, the effect peaks for excitation photon energies [Formula: see text] meV below the direct optical band gap. Temperature-dependent measurements reveal a sign change of the effect at the orthorhombic-tetragonal phase transition, indicating different microscopic origins in the two phases. Within the tetragonal phase, both [Formula: see text] and the amplitude of the circular photogalvanic effect increase with temperature. Our findings support a dynamical Rashba effect in this phase, i.e., a spin splitting caused by thermally induced structural fluctuations which break inversion symmetry.

Local Observation of Phase Segregation in Mixed-Halide Perovskite.

Mixed-halide perovskites have emerged as promising materials for optoelectronics due to their tunable band gap in the entire visible region. A challenge remains, however, in the photoinduced phase segregation, narrowing the band gap of mixed-halide perovskites under illumination thus restricting applications. Here, we use a combination of spatially resolved and bulk measurements to give an in-depth insight into this important yet unclear phenomenon. We demonstrate that photoinduced phase segregation in mixed-halide perovskites selectively occurs at the grain boundaries rather than within the grain centers by using shear-force scanning probe microscopy in combination with confocal optical spectroscopy. Such difference is further evidenced by light-biased bulk Fourier-transform photocurrent spectroscopy, which shows the iodine-rich domain as a minority phase coexisting with the homogeneously mixed phase during illumination. By mapping the surface potential of mixed-halide perovskites, we evidence the higher concentration of positive space charge near the grain boundary possibly provides the initial driving force for phase segregation, while entropic mixing dominates the reverse process. Our work offers detailed insight into the microscopic processes occurring at the boundary of crystalline perovskite grains and will support the development of better passivation strategies, ultimately allowing the processing of more environmentally stable perovskite films.

Brightly Luminescent and Color-Tunable Formamidinium Lead Halide Perovskite FAPbX3 (X = Cl, Br, I) Colloidal Nanocrystals.

In the past few years, hybrid organic-inorganic and all-inorganic metal halide perovskite nanocrystals have become one of the most interesting materials for optoelectronic applications. Here, we report a facile and rapid room temperature synthesis of 15-25 nm formamidinium CH(NH2)2PbX3 (X = Cl, Br, I, or mixed Cl/Br and Br/I) colloidal nanocrystals by ligand-assisted reprecipitation (LARP). The cubic and platelet-like nanocrystals with their emission in the range of 415-740 nm, full width at half-maximum (fwhm) of 20-44 nm, and radiative lifetimes of 5-166 ns enable band gap tuning by halide composition as well as by their thickness tailoring; they have a high photoluminescence quantum yield (up to 85%), colloidal and thermodynamic stability. Combined with surface modification that prevents degradation by water, this nanocrystalline material is an ideal candidate for optoelectronic devices and applications. In addition, optoelectronic measurements verify that the photodetector based on FAPbI3 nanocrystals paves the way for perovskite quantum dot photovoltaics.

Abnormal strong burn-in degradation of highly efficient polymer solar cells caused by spinodal donor-acceptor demixing.

The performance of organic solar cells is determined by the delicate, meticulously optimized bulk-heterojunction microstructure, which consists of finely mixed and relatively separated donor/acceptor regions. Here we demonstrate an abnormal strong burn-in degradation in highly efficient polymer solar cells caused by spinodal demixing of the donor and acceptor phases, which dramatically reduces charge generation and can be attributed to the inherently low miscibility of both materials. Even though the microstructure can be kinetically tuned for achieving high-performance, the inherently low miscibility of donor and acceptor leads to spontaneous phase separation in the solid state, even at room temperature and in the dark. A theoretical calculation of the molecular parameters and construction of the spinodal phase diagrams highlight molecular incompatibilities between the donor and acceptor as a dominant mechanism for burn-in degradation, which is to date the major short-time loss reducing the performance and stability of organic solar cells.

Polarons in Narrow Band Gap Polymers Probed over the Entire Infrared Range: A Joint Experimental and Theoretical Investigation.

We investigate the photoinduced absorption (PIA) spectra of the prototypical donor-acceptor polymer [2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (C-PCPDTBT) and its silicon bridged variant Si-PCPDTBT over a spectral range from 0.07 to 1.5 eV. Comparison between time-dependent density functional theory simulations of the electronic and vibrational transitions of singlet excitons, triplet excitons, polarons, and bipolarons with the experimental results proves that the observed features are due to positive polarons delocalized on the polymer chains. We find that the more crystalline Si-bridged variant gives rise to a red-shift in the transition energies, especially in the mid-infrared (MIR) spectral range and furthermore observe that the pristine polymers' responses depend on the excitation energy. Blending with PCBM, on the other hand, leads to excitation-independent PIA spectra. By computing the response properties of molecular aggregates, we show that polarons are delocalized in not only the intra- but also the interchain direction, leading to intermolecular transitions which correspond well to experimental absorption features at the lowest energies.

Overcoming the Interface Losses in Planar Heterojunction Perovskite-Based Solar Cells.

A scalable, hysteresis-free and planar architecture perovskite solar cell is presented, employing a flame spray synthesized low-temperature processed NiO (LT-NiO) as hole-transporting layer yielding efficiencies close to 18%. Importantly, it is found that LT-NiO boosts the limits of open-circuit voltages toward an impressive non-radiative voltage loss of 0.226 V only, whereas PEDOT: PSS suffers from significant large non-radiative recombination losses.

Detection of X-ray photons by solution-processed organic-inorganic perovskites.

The evolution of real-time medical diagnostic tools such as angiography and computer tomography from radiography based on photographic plates was enabled by the development of integrated solid-state X-ray photon detectors, based on conventional solid-state semiconductors. Recently, for optoelectronic devices operating in the visible and near infrared spectral regions, solution-processed organic and inorganic semiconductors have also attracted immense attention. Here we demonstrate a possibility to use such inexpensive semiconductors for sensitive detection of X-ray photons by direct photon-to-current conversion. In particular, methylammonium lead iodide perovskite (CH3NH3PbI3) offers a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms. Solution processed photodiodes as well as photoconductors are presented, exhibiting high values of X-ray sensitivity (up to 25 µC mGyair-1 cm-3) and responsivity (1.9×104 carriers/photon), which are commensurate with those obtained by the current solid-state technology.

Transient absorption spectroscopy studies on polythiophene-fullerene bulk heterojunction organic blend films sensitized with a low-bandgap polymer.

Recently, the concept of near-infrared sensitization is successfully employed to increase the light harvesting in large-bandgap polymer-based solar cells. To gain deeper insights into the operation mechanism of ternary organic solar cells, a comprehensive understanding of charge transfer-charge transport in ternary blends is a necessity. Herein, P3HT:PCPDTBT:PCBM ternary blend films are investigated by transient absorption spectroscopy. Hole transfer from PCPDTBT-positive polarons to P3HT in the P3HT:PCPDTBT:PCBM 0.9:0.1:1 blend film can be visualized. This process evolves within 140 ps and is discussed with respect to the proposed charge-generation mechanisms.

Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime.

The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 µm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D∗ ≈ 7 × 107 Jones at 1.55 µm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts.

Exact and approximative imaging methods for photoacoustic tomography using an arbitrary detection surface.

Two universal reconstruction methods for photoacoustic (also called optoacoustic or thermoacoustic) computed tomography are derived, applicable to an arbitrarily shaped detection surface. In photoacoustic tomography acoustic pressure waves are induced by illuminating a semitransparent sample with pulsed electromagnetic radiation and are measured on a detection surface outside the sample. The imaging problem consists in reconstructing the initial pressure sources from those measurements. The first solution to this problem is based on the time reversal of the acoustic pressure field with a second order embedded boundary method. The pressure on the arbitrarily shaped detection surface is set to coincide with the measured data in reversed temporal order. In the second approach the reconstruction problem is solved by calculating the far-field approximation, a concept well known in physics, where the generated acoustic wave is approximated by an outgoing spherical wave with the reconstruction point as center. Numerical simulations are used to compare the proposed universal reconstruction methods with existing algorithms.