In situ characterization of vertically oriented carbon nanofibers for three-dimensional nano-electro-mechanical device applications.

We have performed mechanical and electrical characterization of individual as-grown, vertically oriented carbon nanofibers (CNFs) using in situ techniques, where such high-aspect-ratio, nanoscale structures are of interest for three-dimensional (3D) electronics, in particular 3D nano-electro-mechanical-systems (NEMS). Nanoindentation and uniaxial compression tests conducted in an in situ nanomechanical instrument, SEMentor, suggest that the CNFs undergo severe bending prior to fracture, which always occurs close to the bottom rather than at the substrate-tube interface, suggesting that the CNFs are well adhered to the substrate. This is also consistent with bending tests on individual tubes which indicated that bending angles as large as approximately 70 degrees could be accommodated elastically. In situ electrical transport measurements revealed that the CNFs grown on refractory metallic nitride buffer layers were conducting via the sidewalls, whereas those synthesized directly on Si were electrically unsuitable for low-voltage dc NEMS applications. Electrostatic actuation was also demonstrated with a nanoprobe in close proximity to a single CNF and suggests that such structures are attractive for nonvolatile memory applications. Since the magnitude of the actuation voltage is intimately dictated by the physical characteristics of the CNFs, such as diameter and length, we also addressed the ability to tune these parameters, to some extent, by adjusting the plasma-enhanced chemical vapor deposition growth parameters with this bottom-up synthesis approach.

Single, aligned carbon nanotubes in 3D nanoscale architectures enabled by top-down and bottom-up manufacturable processes.

We have developed manufacturable approaches for forming single, vertically aligned carbon nanotubes, where the tubes are centered precisely, and placed within a few hundred nm of 1-1.5 microm deep trenches. These wafer-scale approaches were enabled by using chemically amplified resists and high density, low pressure plasma etching techniques to form the 3D nanoscale architectures. The tube growth was performed using dc plasma-enhanced chemical vapor deposition (PECVD), and the materials used in the pre-fabricated 3D architectures were chemically and structurally compatible with the high temperature (700 degrees C) PECVD synthesis of our tubes, in an ammonia and acetylene ambient. Such scalable, high throughput top-down fabrication processes, when integrated with the bottom-up tube synthesis techniques, should accelerate the development of plasma grown tubes for a wide variety of applications in electronics, such as nanoelectromechanical systems, interconnects, field emitters and sensors. Tube characteristics were also engineered to some extent, by adjusting the Ni catalyst thickness, as well as the pressure and plasma power during growth.