Design of a binary programmable transmitarray based on phase change material for beam steering applications in D-band.

This paper introduces the design of a reconfigurable transmitarray operating within the D-band frequency range (110-170 GHz). The transmitarray unit cell is composed of three metal layers and two quartz dielectric substrates. It achieves a 1-bit phase shift resolution through the alternating states of two innovative switches integrated into the active transmitting patch of the unit cell. To address the challenge of miniaturization in the D-band, compact switches compatible with the proposed unit cell dimensions are introduced. These switches are constructed using phase change materials (PCM) that change between amorphous and crystalline states when exposed to heat. The paper includes a full-wave simulation of the unit cell, demonstrating an insertion loss below 1.5 dB across a wide frequency band of 27%. Additionally, a 10 [Formula: see text] 10 elements transmitarray is synthesized using a numerical tool and its theoretical results are compared to full-wave electromagnetic simulations for validation purposes. The results indicate that by incorporating the proposed switches into the unit cell, the transmitarray achieves promising reconfiguration capabilities within the D-band. Moreover, the paper presents the architecture of a command line designed to bias the PCM switches. Notably, this command line represents a novel approach, as it enables individual biasing of each PCM switch using direct current (DC). The influence of these command lines on the transmitarray's performance is thoroughly investigated. Although there is a compromise in the 1-dB gain bandwidth, the overall behavior of the transmitarray remains encouraging.

High frequency top-down junction-less silicon nanowire resonators.

We report here the first realization of top-down silicon nanowires (SiNW) transduced by both junction-less field-effect transistor (FET) and the piezoresistive (PZR) effect. The suspended SiNWs are among the smallest top-down SiNWs reported to date, featuring widths down to ~20 nm. This has been achieved thanks to a 200 mm-wafer-scale, VLSI process fully amenable to monolithic CMOS co-integration. Thanks to the very small dimensions, the conductance of the silicon nanowire can be controlled by a nearby electrostatic gate. Both the junction-less FET and the previously demonstrated PZR transduction have been performed with the same SiNW. These self-transducing schemes have shown similar signal-to-background ratios, and the PZR transduction has exhibited a relatively higher output signal. Allan deviation (σA) of the same SiNW has been measured with both schemes, and we obtain σ(A) ~ 20 ppm for the FET detection and σ(A) ~ 3 ppm for the PZR detection at room temperature and low pressure. Orders of magnitude improvements are expected from tighter electrostatic control via changes in geometry and doping level, as well as from CMOS integration. The compact, simple topology of these elementary SiNW resonators opens up new paths towards ultra-dense arrays for gas and mass sensing, time keeping or logic switching systems on the SiNW-CMOS platform.