Electronic structure of methoxy-, bromo-, and nitrobenzene grafted onto Si(111).

The properties of Si(111) surfaces grafted with benzene derivatives were investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The investigated materials were nitro-, bromo-, and methoxybenzene layers (-C(6)H(4)-X, with X = NO(2), Br, O-CH(3)) deposited from diazonium salt solutions in a potentiostatic electrochemical process. The UPS spectra of the valence band region are governed by the molecular orbital density of states of the adsorbates, which is modified from the isolated state in the gas phase due to molecule-molecule and molecule-substrate interaction. Depending on the adsorbate, clearly different emission features are observed. The analysis of XPS intensities clearly proves multilayer formation for bromo- and nitrobenzene in agreement with the amount of charge transferred during the grafting process. Methoxybenzene forms only a sub-monolayer coverage. The detailed analysis of binding energy shifts of the XPS emissions for determining the band bending and the secondary electron onset in UPS spectra for determining the work function allow one to discriminate between surface dipole layers--changing the electron affinity--and band bending, affecting only the work function. Thus, complete energy band diagrams of the grafted Si(111) surfaces can be constructed. It was found that silicon surface engineering can be accomplished by the electrochemical grafting process using nitrobenzene and bromobenzene: silicon-derived interface gap states are chemically passivated, and the adsorbate-related surface dipole effects an increase of the electron affinity.

Electronic properties of Si surfaces and side reactions during electrochemical grafting of phenyl layers.

The electrochemical grafting process of 4-nitrobenzene and 4-methoxybenzene (anisole) from diazonium salt solutions has been investigated in situ by monitoring the current density, the band bending, and the nonradiative surface recombination during grafting at different potentials and different concentrations of the diazonium salt in the solution. Ex situ infrared spectroscopic ellipsometry has been used to inspect the Si surface species before and after the grafting process. The band bending decreases with either increasing concentration of diazonium salt or when the redox potential of the diazonium compound (anisole) is nearer to the competing H+/H2 couple. The surface recombination increases at more cathodic potentials if an electron donor group is present at the phenyl ring (nitrobenzene) and vice versa for the electron acceptor group (anisole). The influence of side reactions can be reduced by use of moderate concentration and moderate or strong cathodic potential, depending on the redox potential of the diazonium compound.

Molecular adjustment of the electronic properties of nanoporous electrodes in dye-sensitized solar cells.

Molecular modification of dye-sensitized, mesoporous TiO2 electrodes changes their electronic properties. We show that the open-circuit voltage (V(oc)) of dye-sensitized solar cells varies linearly with the dipole moment of coadsorbed phosphonic, benzoic, and dicarboxylic acid derivatives. A similar dependence is observed for the short-circuit current density (I(sc)). Photovoltage spectroscopy measurements show a shift of the signal onset as a function of dipole moment. We explain the dipole dependence of the V(oc) in terms of a TiO2 conduction band shift with respect to the redox potential of the electrolyte, which is partially followed by the energy level of the dye. The I(sc) shift is explained by a dipole-dependent driving force for the electron current and a dipole-dependent recombination current.