What MEMS Research and Development Can Learn from a Production Environment.

The intricate interdependency of device design and fabrication process complicates the development of microelectromechanical systems (MEMS). Commercial pressure has motivated industry to implement various tools and methods to overcome challenges and facilitate volume production. By now, these are only hesitantly being picked up and implemented in academic research. In this perspective, the applicability of these methods to research-focused MEMS development is investigated. It is found that even in the dynamics of a research endeavor, it is beneficial to adapt and apply tools and methods deduced from volume production. The key step is to change the perspective from fabricating devices to developing, maintaining and advancing the fabrication process. Tools and methods are introduced and discussed, using the development of magnetoelectric MEMS sensors within a collaborative research project as an illustrative example. This perspective provides both guidance to newcomers as well as inspiration to the well-versed experts.

Exchange biased surface acoustic wave magnetic field sensors.

Magnetoelastic composites which use surface acoustic waves show great potential as sensors of low frequency and very low amplitude magnetic fields. While these sensors already provide adequate frequency bandwidth for most applications, their detectability has found its limitation in the low frequency noise generated by the magnetoelastic film. Amongst other contributions, this noise is closely connected to domain wall activity evoked by the strain from the acoustic waves propagating through the film. A successful method to reduce the presence of domain walls is to couple the ferromagnetic material with an antiferromagnetic material across their interface and therefore induce an exchange bias. In this work we demonstrate the application of a top pinning exchange bias stack consisting of ferromagnetic layers of (Fe90Co10)78Si12B10 and Ni81Fe19 coupled to an antiferromagnetic Mn80Ir20 layer. Stray field closure and hence prevention of magnetic edge domain formation is achieved by an antiparallel biasing of two consecutive exchange bias stacks. The set antiparallel alignment of magnetization provides single domain states over the complete films. This results in a reduction of magnetic phase noise and therefore provides limits of detection as low as 28 pT/Hz1/2 at 10 Hz and 10 pT/Hz1/2 at 100 Hz.

Sputter Deposited Magnetostrictive Layers for SAW Magnetic Field Sensors.

For the best possible limit of detection of any thin film-based magnetic field sensor, the functional magnetic film properties are an essential parameter. For sensors based on magnetostrictive layers, the chemical composition, morphology and intrinsic stresses of the layer have to be controlled during film deposition to further control magnetic influences such as crystallographic effects, pinning effects and stress anisotropies. For the application in magnetic surface acoustic wave sensors, the magnetostrictive layers are deposited on rotated piezoelectric single crystal substrates. The thermomechanical properties of quartz can lead to undesirable layer stresses and associated magnetic anisotropies if the temperature increases during deposition. With this in mind, we compare amorphous, magnetostrictive FeCoSiB films prepared by RF and DC magnetron sputter deposition. The chemical, structural and magnetic properties determined by elastic recoil detection, X-ray diffraction, and magneto-optical magnetometry and magnetic domain analysis are correlated with the resulting surface acoustic wave sensor properties such as phase noise level and limit of detection. To confirm the material properties, SAW sensors with magnetostrictive layers deposited with RF and DC deposition have been prepared and characterized, showing comparable detection limits below 200 pT/Hz1/2 at 10 Hz. The main benefit of the DC deposition is achieving higher deposition rates while maintaining similar low substrate temperatures.

Magnetoelastic Coupling and Delta-E Effect in Magnetoelectric Torsion Mode Resonators.

Magnetoelectric resonators have been studied for the detection of small amplitude and low frequency magnetic fields via the delta-E effect, mainly in fundamental bending or bulk resonance modes. Here, we present an experimental and theoretical investigation of magnetoelectric thin-film cantilevers that can be operated in bending modes (BMs) and torsion modes (TMs) as a magnetic field sensor. A magnetoelastic macrospin model is combined with an electromechanical finite element model and a general description of the delta-E effect of all stiffness tensor components Cij is derived. Simulations confirm quantitatively that the delta-E effect of the C66 component has the promising potential of significantly increasing the magnetic sensitivity and the maximum normalized frequency change Δfr. However, the electrical excitation of TMs remains challenging and is found to significantly diminish the gain in sensitivity. Experiments reveal the dependency of the sensitivity and Δfr of TMs on the mode number, which differs fundamentally from BMs and is well explained by our model. Because the contribution of C11 to the TMs increases with the mode number, the first-order TM yields the highest magnetic sensitivity. Overall, general insights are gained for the design of high-sensitivity delta-E effect sensors, as well as for frequency tunable devices based on the delta-E effect.

Wide Band Low Noise Love Wave Magnetic Field Sensor System.

We present a comprehensive study of a magnetic sensor system that benefits from a new technique to substantially increase the magnetoelastic coupling of surface acoustic waves (SAW). The device uses shear horizontal acoustic surface waves that are guided by a fused silica layer with an amorphous magnetostrictive FeCoSiB thin film on top. The velocity of these so-called Love waves follows the magnetoelastically-induced changes of the shear modulus according to the magnetic field present. The SAW sensor is operated in a delay line configuration at approximately 150 MHz and translates the magnetic field to a time delay and a related phase shift. The fundamentals of this sensor concept are motivated by magnetic and mechanical simulations. They are experimentally verified using customized low-noise readout electronics. With an extremely low magnetic noise level of ≈100 pT/[Formula: see text], a bandwidth of 50 kHz and a dynamic range of 120 dB, this magnetic field sensor system shows outstanding characteristics. A range of additional measures to further increase the sensitivity are investigated with simulations.

Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors.

Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner-Wohlfarth (SW) model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of -3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and -311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 µ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and -260 for tensile and compressive stresses, respectively, under a -3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans.

We describe an atomic force microscope (AFM) for the characterization of self-sensing tunneling magnetoresistive (TMR) cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 µm(3) is mounted on a large-area scanner with a scan range of 800 × 800 × 35 µm(3). In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.

Exchange biasing of magnetoelectric composites.

Magnetoelectric composite materials are promising candidates for highly sensitive magnetic-field sensors. However, the composites showing the highest reported magnetoelectric coefficients require the presence of external d.c. magnetic bias fields, which is detrimental to their use as sensitive high-resolution magnetic-field sensors. Here, we report magnetoelectric composite materials that instead rely on intrinsic magnetic fields arising from exchange bias in the device. Thin-film magnetoelectric two-two composites were fabricated by magnetron sputtering on silicon-cantilever substrates. The composites consist of piezoelectric AlN and multilayers with the sequence Ta/Cu/Mn(70)Ir(30)/Fe(50)Co(50) or Ta/Cu/Mn(70)Ir(30)/Fe(70.2)Co(7.8)Si(12)B(10) serving as the magnetostrictive component. The thickness of the ferromagnetic layers and angle dependency of the exchange bias field are used to adjust the shift of the magnetostriction curve in such a way that the maximum piezomagnetic coefficient occurs at zero magnetic bias field. These self-biased composites show high sensitivity to a.c. magnetic fields with a maximum magnetoelectric coefficient of 96 V cm(-1) Oe(-1) at mechanical resonance.