The role of heavy-light-hole mixing on the optical initialization of hole spin in InAs quantum dots.

The initialization of a resident hole spin by the absorption of a circularly polarized light at resonance involves the formation of an excited state called a trion state. For a pure heavy hole, this optical initialization is mediated by the hyperfine electron-nuclear coupling in the trion state. We show here that for a mixed-hole spin an additional mechanism for the optical initialization appears, associated to 'crossed transitions'; it becomes dominant and keeps a high level of hole spin polarization when the magnetic field screens the electron-nuclear interaction. Finally, using a simple model, we obtain a good theoretical agreement with pulsed pump-probe experiments.

Hole-nuclear spin interaction in quantum dots.

We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe and time-resolved photoluminescence experiments. We obtained experimental evidence of the hyperfine interaction between hole and nuclear spins. In the absence of an external magnetic field, our calculations based on dipole-dipole coupling between the hole and the quantum dot nuclei lead to a hole-spin dephasing time for an ensemble of dots of 14 ns, in close agreement with experiments.

Transient chirp in high-speed photonic-crystal quantum-dot lasers with controlled spontaneous emission.

We report on a series of experiments on the dynamics of spontaneous emission controlled nanolasers. The laser cavity is a photonic-crystal slab cavity, embedding self-assembled quantum dots as gain material. The implementation of cavity electrodynamics effects increases the large signal modulation bandwidth significantly, with measured modulation speeds of the order of 10 GHz while keeping an extinction ratio of 19 dB. A linear transient wavelength shift is reported, corresponding to a chirp of less than 100 pm for a 35 ps laser pulse. We observe that the chirp characteristics are independent of the repetition rate of the laser up to 10 GHz.

Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.

We report on spin injection experiments at a Co/Al2O3/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop DeltaV at the interface as high as 1.2 mV for a current density of 0.34 nA.microm(-2). This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al2O3/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers traveling back into the ferromagnetic contact reproduces accurately the experimental results.

Controlled light-matter coupling for a single quantum dot embedded in a pillar microcavity using far-field optical lithography.

Using far-field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in situ at 10 K while measuring the quantum dot emission. Deterministic spectral and spatial matching of the cavity-dot system is achieved in a single step process and evidenced by the observation of strong Purcell effect. Deterministic coupling of two quantum dots to the same optical mode is achieved, a milestone for quantum computing.

Exchange-mediated anisotropy of (ga,mn)as valence-band probed by resonant tunneling spectroscopy.

We report on experiments and theory of resonant tunneling anisotropic magnetoresistance (TAMR) in AlAs/GaAs/AlAs quantum wells (QW) contacted by a (Ga,Mn)As ferromagnetic electrode. Such resonance effects manifest themselves by bias-dependent oscillations of the TAMR signal correlated to the successive positions of heavy (HH) and light (LH) quantized hole energy levels in GaAs QW. We have modeled the experimental data by calculating the spin-dependent resonant tunneling transmission in the frame of the 6 x 6 valence-band k.p theory. The calculations emphasize the opposite contributions of the (Ga,Mn)As HH and LH subbands near the Gamma point, unraveling the anatomy of the diluted magnetic semiconductor valence band.

Coherent generation of acoustic phonons in an optical microcavity.

Ultrafast coherent generation of acoustic phonons is studied in a semiconductor optical microcavity. The confinement of the light pulse amplifies both the generation and the detection of phonons. In addition, the standing wave character of the photon field modifies the generation and detection phonon bandwidth. Coherent generation experiments in an acoustic nanocavity embedded in an optical microcavity are reported as a function of laser energy and incidence angle to evidence the separate role of the optical and exciton resonances. Amplified signals and phonon spectra modified by the optical confinement are demonstrated.

Optically probing the fine structure of a single Mn atom in an InAs quantum dot.

We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A0 whose effective spin J=1 is significantly perturbed by the quantum dot potential and its associated strain field. The spin interaction with photocarriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of mueV, but vanishingly small for electrons.