Strong coupling between a photon and a hole spin in silicon.

Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbour quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible metal-oxide-semiconductor fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330 MHz, largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots.

Finite-temperature fluid-insulator transition of strongly interacting 1D disordered bosons.

We consider the many-body localization-delocalization transition for strongly interacting one-dimensional disordered bosons and construct the full picture of finite temperature behavior of this system. This picture shows two insulator-fluid transitions at any finite temperature when varying the interaction strength. At weak interactions, an increase in the interaction strength leads to insulator [Formula: see text] fluid transition, and, for large interactions, there is a reentrance to the insulator regime. It is feasible to experimentally verify these predictions by tuning the interaction strength with the use of Feshbach or confinement-induced resonances, for example, in (7)Li or (39)K.