Single-shot femtosecond bulk micromachining of silicon with mid-IR tightly focused beams.

Being the second most abundant element on earth after oxygen, silicon remains the working horse for key technologies for the years. Novel photonics platform for high-speed data transfer and optical memory demands higher flexibility of the silicon modification, including on-chip and in-bulk inscription regimes. These are deepness, three-dimensionality, controllability of sizes and morphology of created modifications. Mid-IR (beyond 4 µm) ultrafast lasers provide the required control for all these parameters not only on the surface (as in the case of the lithographic techniques), but also inside the bulk of the semiconductor, paving the way to an unprecedented variety of properties that can be encoded via such an excitation. We estimated the deposited energy density as 6 kJ cm-3 inside silicon under tight focusing of mid-IR femtosecond laser radiation, which exceeds the threshold value determined by the specific heat of fusion (~ 4 kJ cm-3). In such a regime, we successfully performed single-pulse silicon microstructuring. Using third-harmonic and near-IR microscopy, and molecular dynamics, we demonstrated that there is a low-density region in the center of a micromodification, surrounded by a "ring" with higher density, that could be an evidence of its micro-void structure. The formation of created micromodification could be controlled in situ using third-harmonic generation microscopy. The numerical simulation indicates that single-shot damage becomes possible due to electrons heating in the conduction band up to 8 eV (mean thermal energy) and the subsequent generation of microplasma with an overcritical density of 8.5 × 1021 cm-3. These results promise to be the foundation of a new approach of deep three-dimensional single-shot bulk micromachining of silicon.

Control of spectral shift, broadening, and pulse compression during mid-IR self-guiding in high-pressure gases and their mixtures.

Precise control of the nonlinear optical phenomena is the limiting factor for the spectral broadening and pulse compression techniques for high-power laser systems. Here we demonstrate that generation of the blue and red components under filamentation of 4.55-µm mid-IR pulses can be easily adjusted independently through the use of inert and molecular gases, while uniform broadening up to 1-µm bandwidth at the 1/e2 level relies on the proper choice of gas mixture and its compounds partial pressure. Such synthesized media provide a feasible route for the free of damage control of pulse spectral broadening and compression for gigawatt peak power laser systems operating in the mid-IR. Additional management of a generated spectrum can be realized through the adjustment of focusing conditions. The resulted pulse is compressed by a factor of 2.6 down to 62 fs pulse duration (4.1 optical cycles) with additional dispersion compensation. Controllable nonlinear compression down to four optical cycles keeping the millijoule energy level of a mid-IR laser pulse provides direct access to extreme nonlinear optics.

Role of wavelength in photocarrier absorption and plasma formation threshold under excitation of dielectrics by high-intensity laser field tunable from visible to mid-IR.

The development of high power mid-IR laser applications requires a study on laser induced damage threshold (LIDT) in the mid-IR. In this paper we have measured the wavelength dependence of the plasma formation threshold (PFT) that is a LIDT precursor. In order to interpret the observed trends numerically, a model describing the laser induced electron dynamics, based on multiple rate equations, has been developed. We show both theoretically and experimentally that PFT at mid-IR wavelengths is controlled by a transition from weak- to strong-field regime of free carrier absorption. In the case of MgF[Formula: see text] this transition occurs around 3-4 [Formula: see text]m corresponding to the region of the lowermost PFT. The region of the uppermost PFT is reached around 1 [Formula: see text]m and is governed by an interplay of photoionization and weak-field free carrier absorption which manifests itself in both MgF[Formula: see text] and SiO[Formula: see text]. The PFT observed in considered materials exhibits a universal dependence on the excitation wavelength in dielectrics. Thus, the presented results pave the route towards efficient and controllable laser-induced material modifications and should be of direct interest to laser researchers and application engineers for prevention of laser-induced damage of optical components in high-intensity mid-IR laser systems.

3.5-mJ 150-fs Fe:ZnSe hybrid mid-IR femtosecond laser at 4.4 µm for driving extreme nonlinear optics.

We report on entering a new era of mid-IR femtosecond lasers based on amplification in a relatively new gain chalcogenide medium, Fe:ZnSe. Our hybrid all-solid-state laser system is based on direct pulse amplification of femtosecond seed from three-stage AGS-based-optical parametric amplification (OPA) in a Fe:ZnSe laser crystal optically pumped by a Cr:Yb:Ho:YSGG Q-switched nanosecond laser. The development of the pump source with output energy up to 90 mJ operating at a 10 Hz repetition rate regime and highly efficient grating compressor (80%) provides 3.5-mJ 150-fs femtosecond pulses centered at 4.4 µm. Diode-pumped Er:YAG/Er:YLF lasers make it possible to increase the beam quality and repetition rate of the proposed laser system up to 100 Hz. Focusing such a laser radiation into the ∼3λ beam diameter allows us to reach a focus laser intensity up to 1016 W/cm2 which is only an order of magnitude lower than a relativistic intensity of 1017 W/cm2 and enough to drive strong nonlinear optics in mid-IR. We show as a proof-of-principle experiment the generation of four-octave spanning (from 350 nm up to 5.5 µm) supercontinuum in xenon.