Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories.

Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H semiconducting to a distorted transient structure (2Hd) and orthorhombic Td conducting phase in vertical 2H-MoTe2- and Mo1-xWxTe2-based resistive random access memory (RRAM) devices. RRAM programming voltages are tunable by the transition metal dichalcogenide thickness and show a distinctive trend of requiring lower electric fields for Mo1-xWxTe2 alloys versus MoTe2 compounds. Devices showed reproducible resistive switching within 10 ns between a high resistive state and a low resistive state. Moreover, using an Al2O3/MoTe2 stack, On/off current ratios of 106 with programming currents lower than 1 µA were achieved in a selectorless RRAM architecture. The sum of these findings demonstrates that controlled electrical state switching in two-dimensional materials is achievable and highlights the potential of transition metal dichalcogenides for memory applications.

Chemical vapor deposition-prepared sub-nanometer Zr clusters on Pd surfaces: promotion of methane dry reforming.

An inverse Pd-Zr model catalyst was prepared by chemical vapor deposition (CVD) using zirconium-t-butoxide (ZTB) as an organometallic precursor. Pd-Zr interaction was then investigated with focus on the correlation of reforming performance with the oxidation state of Zr. As test reactions, dry reforming of methane (DRM) and methanol steam reforming (MSR) were chosen. Depending on treatments, either ZrOxHy or ZrO2 overlayers or Zr as sub-nanometer clusters could be obtained. Following the adsorption of ZTB on Pd(111), a partially hydroxylated Zr4+-containing layer was formed, which can be reduced to metallic Zr by thermal annealing in ultrahigh vacuum, leading to redox-active Zr0 sub-nanometer clusters. Complementary density functional theoretical (DFT) calculations showed that a single layer of ZrO2 on Pd(111) can be more easily reduced toward the metallic state than a double- and triple layer. Also, the initial and resulting layer compositions greatly depend on gas environment. The lower the water background partial pressure, the faster and more complete the reduction of Zr4+ species to Zr0 on Pd takes place. Under methanol steam reforming conditions, water activation by hydroxylation of Zr occurs. In excess of methanol, strong coking is induced by the Pd/ZrOxHy interface. In contrast, dry reforming of methane is effectively promoted if these initially metallic Zr species are present in the pre-catalyst, leading to a Pd/ZrOxHy phase boundary by oxidative activation under reaction conditions. These reaction-induced active sites for DRM are stable with respect to carbon blocking or coking. In essence, Zr doping of Pd opens specific CO2 activation channels, which are absent on pure metallic Pd.

Surface chemistry of black phosphorus under a controlled oxidative environment.

Black phosphorus (BP), the bulk counterpart of monolayer phosphorene, is a relatively stable phosphorus allotrope at room temperature. However, monolayer phosphorene and ultra-thin BP layers degrade in ambient atmosphere. In this paper, we report the investigation of BP oxidation and discuss the reaction mechanism based on the x-ray photoelectron spectroscopy (XPS) data. The kinetics of BP oxidation was examined under various well-controlled conditions, namely in 5% O2/Ar, 2.3% H2O/Ar, and 5% O2 and 2.3% H2O/Ar. At room temperature, the BP surface is demonstrated not to be oxidized at a high oxidation rate in 5% O2/Ar nor in 2.3% H2O/Ar, according to XPS, with the thickness of the oxidized phosphorus layer <5 Å for 5 h. On the other hand, in the O2/H2O mixture, a 30 Å thickness oxide layer was detected already after 2 h of the treatment. This result points to a synergetic effect of water and oxygen in the BP oxidation. The oxidation effect was also studied in applications to the electrical measurements of BP field-effect transistors (FETs) with or without passivation. The electrical performance of BP FETs with atomic layer deposition (ALD) dielectric passivation or h-BN passivation formed in a glove-box environment are also presented.