Wigner solids of domain wall skyrmions.

Detection and characterization of a different type of topological excitations, namely the domain wall (DW) skyrmion, has received increasing attention because the DW is ubiquitous from condensed matter to particle physics and cosmology. Here we present experimental evidence for the DW skyrmion as the ground state stabilized by long-range Coulomb interactions in a quantum Hall ferromagnet. We develop an alternative approach using nonlocal resistance measurements together with a local NMR probe to measure the effect of low current-induced dynamic nuclear polarization and thus to characterize the DW under equilibrium conditions. The dependence of nuclear spin relaxation in the DW on temperature, filling factor, quasiparticle localization, and effective magnetic fields allows us to interpret this ground state and its possible phase transitions in terms of Wigner solids of the DW skyrmion. These results demonstrate the importance of studying the intrinsic properties of quantum states that has been largely overlooked.

Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells.

A type-II InAs/AlAs[Formula: see text]Sb[Formula: see text] multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using a near-infrared pump pulse, with photon energies near to and above the band gap, probed with a terahertz probe pulse. The transient terahertz absorption is characterized by a multi-rise, multi-decay function that captures long-lived decay times and a metastable state for an excess-photon energy of [Formula: see text] meV. For sufficient excess-photon energy, excitation of the metastable state is followed by a transition to the long-lived states. Excitation dependence of the long-lived states map onto a nearly-direct band gap ([Formula: see text]) density of states with an Urbach tail below [Formula: see text]. As temperature increases, the long-lived decay times increase [Formula: see text], due to the increased phonon interaction of the unintentional defect states, and by phonon stabilization of the hot carriers [Formula: see text]. Additionally, Auger (and/or trap-assisted Auger) scattering above the onset of the plateau may also contribute to longer hot-carrier lifetimes. Meanwhile, the initial decay component shows strong dependence on excitation energy and temperature, reflecting the complicated initial transfer of energy between valence-band and defect states, indicating methods to further prolong hot carriers for technological applications.

Enhanced hot electron lifetimes in quantum wells with inhibited phonon coupling.

Hot electrons established by the absorption of high-energy photons typically thermalize on a picosecond time scale in a semiconductor, dissipating energy via various phonon-mediated relaxation pathways. Here it is shown that a strong hot carrier distribution can be produced using a type-II quantum well structure. In such systems it is shown that the dominant hot carrier thermalization process is limited by the radiative recombination lifetime of electrons with reduced wavefunction overlap with holes. It is proposed that the subsequent reabsorption of acoustic and optical phonons is facilitated by a mismatch in phonon dispersions at the InAs-AlAsSb interface and serves to further stabilize hot electrons in this system. This lengthens the time scale for thermalization to nanoseconds and results in a hot electron distribution with a temperature of 490 K for a quantum well structure under steady-state illumination at room temperature.

Role of chiral quantum Hall edge states in nuclear spin polarization.

Resistively detected NMR (RDNMR) based on dynamic nuclear polarization (DNP) in a quantum Hall ferromagnet (QHF) is a highly sensitive method for the discovery of fascinating quantum Hall phases; however, the mechanism of this DNP and, in particular, the role of quantum Hall edge states in it are unclear. Here we demonstrate the important but previously unrecognized effect of chiral edge modes on the nuclear spin polarization. A side-by-side comparison of the RDNMR signals from Hall bar and Corbino disk configurations allows us to distinguish the contributions of bulk and edge states to DNP in QHF. The unidirectional current flow along chiral edge states makes the polarization robust to thermal fluctuations at high temperatures and makes it possible to observe a reciprocity principle of the RDNMR response. These findings help us better understand complex NMR responses in QHF, which has important implications for the development of RDNMR techniques.

Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner.

We have fabricated and characterized surface-emitting, spin-polarized light-emitting diodes with a Mn-doped InAs dilute magnetic quantum dot spin-injector and contact region grown by low-temperature molecular beam epitaxy, and an In(0.4)Ga(0.6)As quantum dot active region. Energy-dispersive X-ray and electron energy loss spectroscopies performed on individual dots indicate that the Mn atoms incorporate within the dots themselves. Circularly polarized light is observed up to 160 K with a maximum degree of circular polarization of 5.8% measured at 28 K, indicating high-temperature spin injection and device operation.

Large-scale synthesis of nearly monodisperse CdSe/CdS core/shell nanocrystals using air-stable reagents via successive ion layer adsorption and reaction.

Successive ion layer adsorption and reaction (SILAR) originally developed for the deposition of thin films on solid substrates from solution baths is introduced as a technique for the growth of high-quality core/shell nanocrystals of compound semiconductors. The growth of the shell was designed to grow one monolayer at a time by alternating injections of air-stable and inexpensive cationic and anionic precursors into the reaction mixture with core nanocrystals. The principles of SILAR were demonstrated by the CdSe/CdS core/shell model system using its shell-thickness-dependent optical spectra as the probes with CdO and elemental S as the precursors. For this reaction system, a relatively high temperature, about 220-240 degrees C, was found to be essential for SILAR to fully occur. The synthesis can be readily performed on a multigram scale. The size distribution of the core/shell nanocrystals was maintained even after five monolayers of CdS shell (equivalent to about 10 times volume increase for a 3.5 nm CdSe nanocrystal) were grown onto the core nanocrystals. The epitaxial growth of the core/shell structures was verified by optical spectroscopy, TEM, XRD, and XPS. The photoluminescence quantum yield (PL QY) of the as-prepared CdSe/CdS core/shell nanocrystals ranged from 20% to 40%, and the PL full-width at half-maximum (fwhm) was maintained between 23 and 26 nm, even for those nanocrystals for which the UV-vis and PL peaks red-shifted by about 50 nm from that of the core nanocrystals. Several types of brightening phenomena were observed, some of which can further boost the PL QY of the core/shell nanocrystals. The CdSe/CdS core/shell nanocrystals were found to be superior in comparison to the highly luminescent CdSe plain core nanocrystals. The SILAR technique reported here can also be used for the growth of complex colloidal semiconductor nanostructures, such as quantum shells and colloidal quantum wells.