Wavelength drift suppression of a semiconductor laser with filtered optical feedback from a fiber-optic loop using active phase-delay control.

We present a method to suppress the wavelength drift of a semiconductor laser with filtered optical feedback from a long fiber-optic loop. The laser wavelength is stabilized to the filter peak through actively controlling the phase delay of the feedback light. Steady-state analysis of the laser wavelength is performed to illustrate the method. Experimentally, the wavelength drift was reduced by 75% compared to the case without phase delay control. The active phase delay control had negligible effect on the line narrowing performance of the filtered optical feedback to the limit of the measurement resolution.

Superior tunable photocatalytic properties for water splitting in two dimensional GeC/SiC van der Waals heterobilayers.

The photocatalytic characteristics of two-dimensional (2D) GeC-based van der Waals heterobilayers (vdW-HBL) are systematically investigated to determine the amount of hydrogen (H2) fuel generated by water splitting. We propose several vdW-HBL structures consisting of 2D-GeC and 2D-SiC with exceptional and tunable optoelectronic properties. The structures exhibit a negative interlayer binding energy and non-negative phonon frequencies, showing that the structures are dynamically stable. The electronic properties of the HBLs depend on the stacking configuration, where the HBLs exhibit direct bandgap values of 1.978 eV, 2.278 eV, and 2.686 eV. The measured absorption coefficients for the HBLs are over ~ 105 cm-1, surpassing the prevalent conversion efficiency of optoelectronic materials. In the absence of external strain, the absorption coefficient for the HBLs reaches around 1 × 106 cm-1. With applied strain, absorption peaks are increased to ~ 3.5 times greater in value than the unstrained HBLs. Furthermore, the HBLs exhibit dynamically controllable bandgaps via the application of biaxial strain. A decrease in the bandgap occurs for both the HBLs when applied biaxial strain changes from the compressive to tensile strain. For + 4% tensile strain, the structure I become unsuitable for photocatalytic water splitting. However, in the biaxial strain range of - 6% to + 6%, both structure II and structure III have a sufficiently higher kinetic potential for demonstrating photocatalytic water-splitting activity in the region of UV to the visible in the light spectrum. These promising properties obtained for the GeC/SiC vdW heterobilayers suggest an application of the structures could boost H2 fuel production via water splitting.

Fiber-optic silicon Fabry-Perot interferometric bolometer with improved detection limit for magnetic confinement fusion.

Fiber-optic bolometers (FOBs) intended for plasma radiation measurement in magnetically confined fusion have been previously developed using a silicon pillar that functions as both a Fabry-Perot interferometer (FPI) for temperature measurement and an absorber for the radiation. We report an FOB design that can significantly improve the detection sensitivity over earlier designs by engineering the absorber of the FOB. Our design uses the fact that, compared with a silicon pillar, a gold film with the same x-ray absorption thickness will show a much higher temperature rise from a given power density of the radiation. Therefore, the responsivity of an FOB can be improved by attaching a large gold disk to the silicon FPI as the absorber. We have developed a fabrication method for FOBs of such design and obtained an FOB with a 4-µm-thick, 0.6-mm-diameter gold disk attached to a 200-µm-diameter, 100-µm-thick silicon FPI. We have characterized the noise, responsivity, response time, and noise-equivalent power density (NEPD) and compared these with the earlier design where the absorber is mainly the silicon FPI itself. The experimental result suggests that the FOB with the gold disk achieves a responsivity of ∼2.8 mK/(W/m2) and a noise-equivalent-power-density of 0.13 W/m2, which are, respectively, more than nine times larger and six times smaller compared to the FOB using a previous design. Improved NEPD and good absorption over a broad frequency range will make the FOB more attractive for applications in magnetic-confinement fusion devices.

High resolution, fast response fiber-optic temperature sensor with reduced end conduction effect.

We report a fiber-optic silicon Fabry-Perot temperature sensor with high speed by considering the end conduction effect, which refers to the unwanted heat transfer between the sensing element and the fiber stub delaying the sensor from reaching thermal equilibrium with the ambient environment. The sensor is constructed by connecting the narrow edge surface of a thin silicon plate to the edge of the microtube attached to the fiber tip. Compared to the traditional design where the silicon plate is attached to the fiber end face on its large plate surface, the new sensor design minimizes the heat transfer path to the fiber stub for improved sensor speed. It has the additional benefit of increased cavity length for improved resolution. We show that, compared with the sensor of traditional design, the sensor of the new design shortened the characteristic response time in still air from 83 ms to 13 ms and improved the sensor resolution by a factor of 12, from 0.15 K to 0.012 K.

Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency.