Oxidation-induced thermopower inversion in nanocrystalline SnSe thin film.

Given the growing demand for environmentally friendly energy sources, thermoelectric energy conversion has attracted increased interest as a promising CO2-free technology. SnSe single crystals have attracted attention as a next generation thermoelectric material due to outstanding thermoelectric properties arising from ultralow thermal conductivity. For practical applications, on the other hand, polycrystalline SnSe should be also focused because the production cost and the flexibility for applications are important factors, which requires the systematic investigation of the stability of thermoelectric performance under a pseudo operating environment. Here, we report that the physical properties of SnSe crystals with nano to submicron scale are drastically modified by atmospheric annealing. We measured the Seebeck effect while changing the annealing time and found that the large positive thermopower, + 757 µV K-1, was completely suppressed by annealing for only a few minutes and was eventually inverted to be the large negative value, - 427 µV K-1. This result would further accelerate intensive studies on SnSe nanostructures, especially focusing on the realistic device structures and sealing technologies for energy harvesting applications.

The actual electronic band structure of a rubrene single crystal.

A proper understanding on the charge mobility in organic materials is one of the key factors to realize highly functionalized organic semiconductor devices. So far, however, although a number of studies have proposed the carrier transport mechanism of rubrene single crystal to be band-like, there are disagreements between the results reported in these papers. Here, we show that the actual dispersion widths of the electronic bands formed by the highest occupied molecular orbital are much smaller than those reported in the literature, and that the disagreements originate from the diffraction effect of photoelectron and the vibrations of molecules. The present result indicates that the electronic bands would not be the main channel for hole mobility in case of rubrene single crystal and the necessity to consider a more complex picture like molecular vibrations mediated carrier transport. These findings open an avenue for a thorough insight on how to realize organic semiconductor devices with high carrier mobility.

Triboelectric energy harvesting with surface-charge-fixed polymer based on ionic liquid.

A novel triboelectric energy harvester has been developed using an ionic liquid polymer with cations fixed at the surface. In this report, the fabrication of the device and the characterization of its energy harvesting performance are detailed. An electrical double layer was induced in the ionic liquid polymer precursor to attract the cations to the surface where they are immobilized using a UV-based crosslinking reaction. The finalized polymer is capable of generating an electrical current when contacted by a metal electrode. Using this property, energy harvesting experiments were conducted by cyclically contacting a gold-surface electrode with the charge fixed surface of the polymer. Control experiments verified the effect of immobilizing the cations at the surface. By synthesizing a polymer with the optimal composition ratio of ionic liquid to macromonomer, an output of 77 nW/cm2 was obtained with a load resistance of 1 MΩ at 1 Hz. This tuneable power supply with a µA level current output may contribute to Internet of Things networks requiring numerous sensor nodes at remote places in the environment.

Enhanced thermopower in ZnO two-dimensional electron gas.

Control of dimensionality has proven to be an effective way to manipulate the electronic properties of materials, thereby enabling exotic quantum phenomena, such as superconductivity, quantum Hall effects, and valleytronic effects. Another example is thermoelectricity, which has been theoretically proposed to be favorably controllable by reducing the dimensionality. Here, we verify this proposal by performing a systematic study on a gate-tuned 2D electron gas (2DEG) system formed at the surface of ZnO. Combining state-of-the-art electric-double-layer transistor experiments and realistic tight-binding calculations, we show that, for a wide range of carrier densities, the 2DEG channel comprises a single subband, and its effective thickness can be reduced to [Formula: see text] 1 nm at sufficiently high gate biases. We also demonstrate that the thermoelectric performance of the 2DEG region is significantly higher than that of bulk ZnO. Our approach opens up a route to exploit the peculiar behavior of 2DEG electronic states and realize thermoelectric devices with advanced functionalities.

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

Electric-field control of magnetic moment in Pd.

Several magnetic properties have recently become tunable with an applied electric field. Particularly, electrically controlled magnetic phase transitions and/or magnetic moments have attracted attention because they are the most fundamental parameters in ferromagnetic materials. In this study, we showed that an electric field can be used to control the magnetic moment in films made of Pd, usually a non-magnetic element. Pd ultra-thin films were deposited on ferromagnetic Pt/Co layers. In the Pd layer, a ferromagnetically ordered magnetic moment was induced by the ferromagnetic proximity effect. By applying an electric field to the ferromagnetic surface of this Pd layer, a clear change was observed in the magnetic moment, which was measured directly using a superconducting quantum interference device magnetometer. The results indicate that magnetic moments extrinsically induced in non-magnetic elements by the proximity effect, as well as an intrinsically induced magnetic moments in ferromagnetic elements, as reported previously, are electrically tunable. The results of this study suggest a new avenue for answering the fundamental question of "can an electric field make naturally non-magnetic materials ferromagnetic?".

V-shaped organic semiconductors with solution processability, high mobility, and high thermal durability.

V-shaped organic semiconductors have been designed and synthesized via a large-scale applicable synthetic route. Solution-crystallized films based on such molecules have demonstrated high-performance transistor properties with maximum mobilities of up to 9.5 cm(2) V(-1) s(-1) as well as pronounced thermal durability of up to 150 °C inherent in the V-shaped cores.

Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility.

We here report naphtho[2,1-b:6,5-b']difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm(2) V(-1) s(-1) along with high I(on)/I(off) ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.